机构

• 半导体研究所 [15]

采集方式

• OAI收割 [15]

内容类型

• 期刊论文 [15]

发表日期

• 2011 [4]
• 2010 [1]
• 2009 [3]
• 2008 [3]
• 1993 [1]
• 1991 [3]
• 更多

学科主题

• 半导体物理 [15]

筛选

浏览/检索结果: 共15条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen 期刊论文  OAI收割 journal of physics and chemistry of solids, Journal of Physics and Chemistry of Solids, 2011, 2011, 卷号: 72, 72, 期号: 6, 页码: 725-729, 725-729 作者:  Gai, Yanqin;  Tang, Gang;  Li, Jingbo;  Gai, Y.(yqgai@semi.ac.cn)   |  收藏  |  浏览/下载：32/0  |  提交时间：2012/06/14 Activation energy  Binding energy  Calculations  Complexation  Doping(additives)  Electronic structure  Zinc  Zinc oxide  Activation Energy  Binding Energy  Calculations  Complexation  Doping(Additives)  Electronic Structure  Zinc  Zinc Oxide   Thermoelectric properties of ZnO nanowires: A first principle research 期刊论文  OAI收割 physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 30-31, 页码: 2878-2881, 2878-2881 作者:  Liu CR;  Li JB;  Liu, CR (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, supermanliu5@semi.ac.cn   |  收藏  |  浏览/下载：22/0  |  提交时间：2012/01/06 INITIO MOLECULAR-DYNAMICS  AUGMENTED-WAVE METHOD  SILICON NANOWIRES  DOPED ZNO  CONDUCTIVITY  TEMPERATURE  METALS  Initio Molecular-dynamics  Augmented-wave Method  Silicon Nanowires  Doped Zno  Conductivity  Temperature  Metals   The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文  OAI收割 physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 7, 页码: 1152-1155, 1152-1155 作者:  Liu CR;  Li JB;  Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn;  jbli@semi.ac.cn   |  收藏  |  浏览/下载：58/6  |  提交时间：2011/07/05 First principle calculation  Indium nitride  Band gap  Defect  INITIO MOLECULAR-DYNAMICS  AUGMENTED-WAVE METHOD  INDIUM NITRIDE  GAP  PSEUDOPOTENTIALS  SEMICONDUCTORS  IMPURITIES  ABSORPTION  DEFECTS  ALLOYS  First Principle Calculation  Indium Nitride  Band Gap  Defect  Initio Molecular-dynamics  Augmented-wave Method  Indium Nitride  Gap  Pseudopotentials  Semiconductors  Impurities  Absorption  Defects  Alloys   First principle study of the thermal conductance in graphene nanoribbon with vacancy and substitutional silicon defects 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 98, 98, 期号: 11, 页码: article no.113114, Article no.113114 作者:  Jiang JW;  Wang BS;  Wang JS;  Jiang, JW, Natl Univ Singapore, Dept Phys, Singapore 117542, Singaporephyjj@nus.edu.sg   |  收藏  |  浏览/下载：52/4  |  提交时间：2011/07/05 First-principles study of UC2 and U2C3 期刊论文  OAI收割 journal of nuclear materials, JOURNAL OF NUCLEAR MATERIALS, 2010, 2010, 卷号: 396, 396, 期号: 2-3, 页码: 218-222, 218-222 作者:  Shi HL (Shi Hongliang);  Zhang P (Zhang Ping);  Li SS (Li Shu-Shen);  Wang BT (Wang Baotian);  Sun B (Sun Bo)   |  收藏  |  浏览/下载：78/12  |  提交时间：2010/04/21 First-principle calculation  First-principle Calculation  Gga Plus u  Elastic Constants  Chemical Bonding  Valence State  Brillouin-zone Integrations  Carbides  Spectra  Metals  GGA plus U  Elastic constants  Chemical bonding  Valence state  BRILLOUIN-ZONE INTEGRATIONS  CARBIDES  SPECTRA  METALS   First principle study of Mg, Si and Mn co-doped GaN 期刊论文  OAI收割 acta physica sinica, 2009, 卷号: 58, 期号: 1, 页码: 450-458 作者:  Zhao DG 收藏  |  浏览/下载：231/44  |  提交时间：2010/03/08 Mg Si and Mn co-doped GaN  electronic structure  T-C  optical properties   The bipolar doping of ZnS via native defects and external dopants 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113704 作者:  Li JB 收藏  |  浏览/下载：131/30  |  提交时间：2010/03/08 AUGMENTED-WAVE METHOD  P-TYPE ZNO  POINT-DEFECTS  II-VI  NITROGEN  SEMICONDUCTORS  1ST-PRINCIPLES  COMPENSATION  ENHANCEMENT   Electronic structures and mechanical properties of uranium monocarbide from first-principles LDA plus U and GGA plus U calculations 期刊论文  OAI收割 physics letters a, 2009, 卷号: 373, 期号: 39, 页码: 3577-3581 Shi HL; Zhang P; Li SS; Sun B; Wang BT 收藏  |  浏览/下载：54/1  |  提交时间：2010/03/08 First-principle calculation  LDA plus U  GGA plus U  Elastic constants  Phonon dispersion   Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文  OAI收割 applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112 Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB 收藏  |  浏览/下载：24/0  |  提交时间：2010/03/08 P-TYPE GAN  MOLECULAR-BEAM EPITAXY  AUGMENTED-WAVE METHOD  VAPOR-PHASE EPITAXY  ELECTRICAL-PROPERTIES  OXYGEN  ACTIVATION  SILICON   First-principle study of native defects in CuScO2 and CuYO2 期刊论文  OAI收割 chinese physics b, 2008, 卷号: 17, 期号: 11, 页码: 4279-4284 Fang, ZJ; Shi, LJ; Liu, YH 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/08 CuMO2  native defects  vienna ab-initio simulation package (VASP)