机构

• 半导体研究所 [26]

采集方式

• OAI收割 [15]
• iSwitch采集 [11]

内容类型

• 期刊论文 [26]

发表日期

• 2011 [8]
• 2010 [2]
• 2009 [5]
• 2008 [6]
• 1993 [1]
• 1991 [4]
• 更多

学科主题

• 半导体物理 [15]

筛选

浏览/检索结果: 共26条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Thermoelectric properties of zno nanowires: a first principle research 期刊论文  iSwitch采集 Physics letters a, 2011, 卷号: 375, 期号: 30-31, 页码: 2878-2881 作者:  Liu, Chaoren;  Li, Jingbo 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Thermoelectric property  Zno nanowire  First principle calculation  Boltzmann transport equation   Formation of shallow acceptors in zno doped by lithium with the addition of nitrogen 期刊论文  iSwitch采集 Journal of physics and chemistry of solids, 2011, 卷号: 72, 期号: 6, 页码: 725-729 作者:  Gai, Yanqin;  Tang, Gang;  Li, Jingbo 收藏  |  浏览/下载：47/0  |  提交时间：2019/05/12 Semiconductors  Ab initio calculations  Defects  Electronic structure   First principle study of the thermal conductance in graphene nanoribbon with vacancy and substitutional silicon defects 期刊论文  iSwitch采集 Applied physics letters, 2011, 卷号: 98, 期号: 11, 页码: 3 作者:  Jiang, Jin-Wu;  Wang, Bing-Shen;  Wang, Jian-Sheng 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 The explanation of inn bandgap discrepancy based on experiments and first-principle calculations 期刊论文  iSwitch采集 Physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155 作者:  Liu, Chaoren;  Li, Jingbo 收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12 First principle calculation  Indium nitride  Band gap  Defect   Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen 期刊论文  OAI收割 journal of physics and chemistry of solids, Journal of Physics and Chemistry of Solids, 2011, 2011, 卷号: 72, 72, 期号: 6, 页码: 725-729, 725-729 作者:  Gai, Yanqin;  Tang, Gang;  Li, Jingbo;  Gai, Y.(yqgai@semi.ac.cn)   |  收藏  |  浏览/下载：32/0  |  提交时间：2012/06/14 Activation energy  Binding energy  Calculations  Complexation  Doping(additives)  Electronic structure  Zinc  Zinc oxide  Activation Energy  Binding Energy  Calculations  Complexation  Doping(Additives)  Electronic Structure  Zinc  Zinc Oxide   Thermoelectric properties of ZnO nanowires: A first principle research 期刊论文  OAI收割 physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 30-31, 页码: 2878-2881, 2878-2881 作者:  Liu CR;  Li JB;  Liu, CR (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, supermanliu5@semi.ac.cn   |  收藏  |  浏览/下载：22/0  |  提交时间：2012/01/06 INITIO MOLECULAR-DYNAMICS  AUGMENTED-WAVE METHOD  SILICON NANOWIRES  DOPED ZNO  CONDUCTIVITY  TEMPERATURE  METALS  Initio Molecular-dynamics  Augmented-wave Method  Silicon Nanowires  Doped Zno  Conductivity  Temperature  Metals   The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文  OAI收割 physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 7, 页码: 1152-1155, 1152-1155 作者:  Liu CR;  Li JB;  Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn;  jbli@semi.ac.cn   |  收藏  |  浏览/下载：58/6  |  提交时间：2011/07/05 First principle calculation  Indium nitride  Band gap  Defect  INITIO MOLECULAR-DYNAMICS  AUGMENTED-WAVE METHOD  INDIUM NITRIDE  GAP  PSEUDOPOTENTIALS  SEMICONDUCTORS  IMPURITIES  ABSORPTION  DEFECTS  ALLOYS  First Principle Calculation  Indium Nitride  Band Gap  Defect  Initio Molecular-dynamics  Augmented-wave Method  Indium Nitride  Gap  Pseudopotentials  Semiconductors  Impurities  Absorption  Defects  Alloys   First principle study of the thermal conductance in graphene nanoribbon with vacancy and substitutional silicon defects 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 98, 98, 期号: 11, 页码: article no.113114, Article no.113114 作者:  Jiang JW;  Wang BS;  Wang JS;  Jiang, JW, Natl Univ Singapore, Dept Phys, Singapore 117542, Singaporephyjj@nus.edu.sg   |  收藏  |  浏览/下载：52/4  |  提交时间：2011/07/05 First-principles study of uc2 and u2c3 期刊论文  iSwitch采集 Journal of nuclear materials, 2010, 卷号: 396, 期号: 2-3, 页码: 218-222 作者:  Shi, Hongliang;  Zhang, Ping;  Li, Shu-Shen;  Wang, Baotian;  Sun, Bo 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 First-principle calculation  Gga plus u  Elastic constants  Chemical bonding  Valence state   First-principles study of UC2 and U2C3 期刊论文  OAI收割 journal of nuclear materials, JOURNAL OF NUCLEAR MATERIALS, 2010, 2010, 卷号: 396, 396, 期号: 2-3, 页码: 218-222, 218-222 作者:  Shi HL (Shi Hongliang);  Zhang P (Zhang Ping);  Li SS (Li Shu-Shen);  Wang BT (Wang Baotian);  Sun B (Sun Bo)   |  收藏  |  浏览/下载：78/12  |  提交时间：2010/04/21 First-principle calculation  First-principle Calculation  Gga Plus u  Elastic Constants  Chemical Bonding  Valence State  Brillouin-zone Integrations  Carbides  Spectra  Metals  GGA plus U  Elastic constants  Chemical bonding  Valence state  BRILLOUIN-ZONE INTEGRATIONS  CARBIDES  SPECTRA  METALS