机构

• 半导体研究所 [7]

采集方式

• OAI收割 [7]

内容类型

• 期刊论文 [5]
• 会议论文 [2]

发表日期

• 2011 [1]
• 2010 [1]
• 2007 [1]
• 2006 [1]
• 2005 [1]
• 1999 [1]
• 更多

学科主题

• 半导体材料 [7]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文  OAI收割 acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 1, 页码: article no.16108, Article no.16108 作者:  Wang B;  Li ZC;  Yao R;  Liang M;  Yan FW   |  收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05 GaN-based  LED  Al composition  electron blocking layer  TEMPERATURE  ALLOYS  MOVPE  Gan-based  Led  Al Composition  Electron Blocking Layer  Temperature  Alloys  Movpe   Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083112 Song YF (Song Yafeng); Lu YW (Lu Yanwu); Zhang BA (Zhang Biao); Xu XQ (Xu Xiaoqing); Wang J (Wang Jun); Guo Y (Guo Yan); Shi K (Shi Kai); Li ZW (Li Zhiwei); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：28/0  |  提交时间：2010/12/05 OPTICAL PHONON ENERGY  INVERSION-LAYERS  TRANSITIONS  RELAXATION  LASERS  STATES   Reliable concentrated photovoltaic system with compound concentrator 会议论文  OAI收割 solar world congress of the international-solar-energy-society, beijing, peoples r china, sep 18-21, 2007 作者:  Huang TM 收藏  |  浏览/下载：33/0  |  提交时间：2010/03/09 SOLAR-CELLS   Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278 Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.) 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 4H-SiC  homoepitaxial layers  surface morphological defect  optical microscopy  SILICON-CARBIDE  DISLOCATIONS  FILMS   Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 applied physics a-materials science & processing, 2005, 卷号: 80, 期号: 1, 页码: 141-144 Chen DJ; Shen B; Bi ZX; Zhang KX; Gu SL; Zhang R; Shi, Y; Zheng YD; Sun XH; Wan SK; Wang ZG 收藏  |  浏览/下载：117/41  |  提交时间：2010/03/09 MOLECULAR-BEAM EPITAXY   High quality hydrogenated amorphous silicon films with significantly improved stability 会议论文  OAI收割 symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting, san francisco, ca, apr 14-17, 1998 Sheng SR; Liao XB; Ma ZX; Yue GZ; Wang YQ; Kong GL 收藏  |  浏览/下载：19/0  |  提交时间：2010/10/29 A-SI-H  LIGHT SOAKING  PHOTOCONDUCTIVITY  INCREASE   Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 1998, 卷号: 191, 期号: 1-2, 页码: 34-38 Li XB; Sun DZ; Zhang JP; Zhu SR; Kong MY 收藏  |  浏览/下载：29/0  |  提交时间：2010/08/12 LIGHT-EMITTING-DIODES