机构

• 半导体研究所 [14]
• 物理研究所 [4]
• 苏州纳米技术与纳米仿... [1]
• 长春光学精密机械与物... [1]
• 近代物理研究所 [1]

采集方式

• OAI收割 [19]
• iSwitch采集 [2]

内容类型

• 期刊论文 [17]
• 会议论文 [4]

发表日期

• 2020 [1]
• 2018 [1]
• 2015 [1]
• 2013 [2]
• 2011 [1]
• 2009 [2]
• 更多

学科主题

• 半导体材料 [9]
• 光电子学 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共21条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125359 作者:  X.F. Liu;   G.G. Yan;   L. Sang;   Y.X. Niu;   Y.W. He;   Z.W. Shen;   Z.X. Wen;   J. Chen;   W.S. Zhao;   L. Wang;   M. Guan;   F. Zhang;   G.S. Sun;   Y.P. Zeng   |  收藏  |  浏览/下载：34/0  |  提交时间：2021/11/26 The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition 期刊论文  OAI收割 Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728 作者:  Jiang, K.;  Sun, X. J.;  Ben, J. W.;  Jia, Y. P.;  Liu, H. N.   |  收藏  |  浏览/下载：9/0  |  提交时间：2019/09/17 light-emitting-diodes  screw dislocations  threading dislocations  phase  epitaxy  gan  films  algan  core  edge  generation  Chemistry  Crystallography   Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth 期刊论文  OAI收割 nanomaterials, 2015, 卷号: 5, 期号: 3, 页码: 1532-1543 Xingfang Liu; Yu Chen; Changzheng Sun; Min Guan; Yang Zhang; Feng Zhang; Guosheng Sun; Yiping Zeng 收藏  |  浏览/下载：16/0  |  提交时间：2016/03/29 Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 371, 期号: 0, 页码: 7-10 作者:  Li, DY(李德尧) 收藏  |  浏览/下载：12/0  |  提交时间：2014/01/13 Surface structure  Metalorganic vapor phase epitaxy  Nitrides  Semiconducting III-V materials   Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 2013, 卷号: 371, 页码: 7-10 Zhou, Kun; Liu, Jianping; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Li, Deyao; Zhang, Liqun; Wang, Feng; Zhu, Jianjun; Yang, Hui 收藏  |  浏览/下载：11/0  |  提交时间：2013/08/27 High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005 Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：23/0  |  提交时间：2012/06/14 Epitaxial growth  Ethylene  Growth rate  Morphology  Surface roughness   Shape prediction of two-dimensional adatom islands on crystal surfaces during homoepitaxial growth 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 页码: 3 作者:  Yin, Cong;  Ning, Xi-Jing;  Zhuang, Jun;  Xie, Yi-Qun;  Gong, Xiu-Fang   |  收藏  |  浏览/下载：11/0  |  提交时间：2018/05/31 ab initio calculations  adsorbed layers  epitaxial growth  island structure  surface potential   In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文  OAI收割 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09 in-situ doping  boron  aluminum  memory effects  hot-wall LPCVD  4H-SiC   Morphological defects and uniformity issues of 4h-sic homoepitaxial layers grown on off-oriented (0001)si faces 期刊论文  iSwitch采集 Materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278 作者:  Sun, G. S.;  Liu, X. F.;  Gong, Q. C.;  Wang, L.;  Zhao, W. S. 收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12 4h-sic  Homoepitaxial layers  Surface morphological defect  Optical microscopy   Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278 Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.) 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 4H-SiC  homoepitaxial layers  surface morphological defect  optical microscopy  SILICON-CARBIDE  DISLOCATIONS  FILMS