机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [11]

发表日期

• 2015 [1]
• 2014 [2]
• 2012 [1]
• 2010 [1]
• 2009 [1]
• 2006 [4]
• 更多

学科主题

• 光电子学 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility 期刊论文  OAI收割 international journal of thermophysics, International Journal of Thermophysics, 2015, 2015, 卷号: 36, 36, 页码: 980–986, 980–986 作者:  Yan Liu;  Jing Yan;  Hongjuan Wang;  Buwen Cheng;  Genquan Han   |  收藏  |   Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate 期刊论文  OAI收割 semiconductor science and technology, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 2014, 卷号: 29, 29, 期号: 11, 页码: 115027, 115027 作者:  Liu, Yan;  Yan, Jing;  Liu, Mingshan;  Wang, Hongjuan;  Zhang, Qingfang   |  收藏  |   Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 thin solid films, THIN SOLID FILMS, 2014, 2014, 卷号: 564, 564, 页码: 135-139, 135-139 作者:  He, XG;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P   |  收藏  |   Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor 期刊论文  OAI收割 international symposium on vlsi technology, systems, and applications, proceedings, 2012, 页码: 6210151 Wang, Lanxiang; Han, Genquan; Su, Shaojian; Cheng, Buwen; Yeo, Yee-Chia; Zhou, Qian; Yang, Yue; Guo, Pengfei; Wang, Wei; Tong, Yi; Lim, Phyllis Shi Ya; Xue, Chunlai; Wang, Qiming 收藏  |   Effective recombination velocity of textured surfaces 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 96, 期号: 19, 页码: art. no. 193107 Xiong KL (Xiong Kanglin); Lu SL (Lu Shulong); Jiang DS (Jiang Desheng); Dong JR (Dong Jianrong); Yang H (Yang Hui) 收藏  |   Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文  OAI收割 acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420 作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG 收藏  |   Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105 Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.) 收藏  |   Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 89, 期号: 9, 页码: art.no.092114 Wang H (Wang H.); Huang Y (Huang Y.); Sun Q (Sun Q.); Chen J (Chen J.); Wang LL (Wang L. L.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Wang YT (Wang Y. T.); Yang H (Yang H.) 收藏  |   Study on Raman spectra of GaMnAs 期刊论文  OAI收割 journal of infrared and millimeter waves, 2006, 卷号: 25, 期号: 3, 页码: 207-212 Ma BS; Wang WJ; Su FH; Den JJ; Jiang CP; Liu HL; Ding K; Zhao JH; Li GH 收藏  |   Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 89, 期号: 11, 页码: art.no.112106 Zhao DG (Zhao D. G.); Yang H (Yang Hui); Zhu JJ (Zhu J. J.); Jiang DS (Jiang D. S.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Wang YT (Wang Y. T.); Liang JW (Liang J. W.) 收藏  |