机构

• 半导体研究所 [105]

采集方式

• OAI收割 [105]

内容类型

• 期刊论文 [90]
• 会议论文 [15]

发表日期

• 2015 [1]
• 2014 [2]
• 2011 [7]
• 2010 [5]
• 2009 [3]
• 2008 [3]
• 更多

学科主题

• 半导体材料 [105]

筛选

浏览/检索结果: 共105条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Optical and electrical properties of textured sulfur-hyperdoped silicon: a thermal annealing study 期刊论文  OAI收割 journal of materials science, 2015, 卷号: 50, 期号: 9, 页码: 3391-3398 KeFan Wang; Pingan Liu; Shengchun Qu; Yuanxu Wang; Zhanguo Wang 收藏  |  浏览/下载：12/0  |  提交时间：2016/03/23 The magnetic field effect on optical properties of Sm-doped GaN thin films 期刊论文  OAI收割 journal of materials science-materials in electronics, 2014, 卷号: 25, 期号: 7, 页码: 2974-2978 Sun, P; Li, YC; Meng, XQ; Yu, S; Liu, YH; Liu, FQ; Wang, ZG 收藏  |  浏览/下载：10/0  |  提交时间：2015/04/02 The magnetic field effect on optical properties of Sm-doped GaN thin films 期刊论文  OAI收割 journal of materials science-materials in electronics, 2014, 卷号: 25, 期号: 7, 页码: 2974-2978 Sun, P; Li, YC; Meng, XQ; Yu, S; Liu, YH; Liu, FQ; Wang, ZG 收藏  |  浏览/下载：24/0  |  提交时间：2015/04/02 Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文  OAI收割 journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125 作者:  Wang C 收藏  |  浏览/下载：68/3  |  提交时间：2011/07/05 Hydrogenated nanocrystalline silicon  Buffer layer  i/p interface  Solar cells  OPEN-CIRCUIT VOLTAGE  A-SI-H  P/I-INTERFACE  MICROCRYSTALLINE SILICON  VAPOR-DEPOSITION  FILMS  CAPACITANCE  EFFICIENCY  CRYSTALLINE  TEMPERATURE   Enhanced absorption in nanocrystalline silicon thin film solar cells using surface plasmon polaritons 期刊论文  OAI收割 icmree2011 - proceedings 2011 international conference on materials for renewable energy and environment, 2011, 卷号: 1, 页码: 242-246 Hao, Huiying; Li, Weimin; Xing, Jie; Fan, Zhenjun, 收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14 Absorption  Electromagnetic wave polarization  Energy gap  Gold  Light absorption  Nanostructured materials  Optical properties  Particle optics  Phonons  Photons  Plasmons  Quantum theory  Scattering  Semiconducting silicon compounds  Silicon solar cells  Silver  Solar absorbers  Solar energy  Surface plasmon resonance  Surfaces  Thin films   The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42 作者:  Song HP;  Shi K;  Sang L;  Wei HY 收藏  |  浏览/下载：56/3  |  提交时间：2011/07/05 Metal organic chemical vapor deposition  Sapphire  Zinc compounds  Semiconducting II-VI materials  VAPOR-PHASE EPITAXY  OPTICAL-PROPERTIES  ZNO NANORODS  RAMAN-SCATTERING  M-PLANE  FILMS  PHOTOLUMINESCENCE  DEPOSITION  NANOWIRES  FIELDS   Wurtzite to zincblende transition of InN films on(011) SrTiO3 by decreasing trimethylindium flows 期刊论文  OAI收割 applied physics a: materials science and processing, 2011, 页码: 1-5 Jia, C.H.; Chen, Y.H.; Zhang, B.; Liu, X.L.; Yang, S.Y.; Zhang, W.F.; Wang, Z.G. 收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14 Absorption  Absorption spectroscopy  Crystal atomic structure  Epitaxial growth  Metallorganic chemical vapor deposition  Optical properties  Organic chemicals  Strontium alloys  Strontium titanates  X ray diffraction  Zinc sulfide   Structures and optical characteristics of InGaN quantum dots grown by MBE 期刊论文  OAI收割 xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032 Wang, Baozhu; Yan, Cuiying; Wang, Xiaoliang 收藏  |  浏览/下载：22/0  |  提交时间：2012/06/14 Atomic force microscopy  Gallium nitride  Molecular beam epitaxy  Optical materials  Optical properties  Reflection high energy electron diffraction  Sapphire   Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05 UNDOPED GALLIUM ANTIMONIDE  SELF-DIFFUSION  NATIVE DEFECTS  N-TYPE  CRYSTALS  CATHODOLUMINESCENCE  PHOTOLUMINESCENCE  SEMICONDUCTORS  SPECTROSCOPY  LUMINESCENCE   Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011 作者:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang   |  收藏  |  浏览/下载：30/0  |  提交时间：2012/06/14 Carrier concentration  Etching  Gallium alloys  Optical properties  Point defects  Raman spectroscopy  Semiconducting gallium compounds  Vapor phase epitaxy  Vapors  Carrier Concentration  Etching  Gallium Alloys  Optical Properties  Point Defects  Raman Spectroscopy  Semiconducting Gallium Compounds  Vapor Phase Epitaxy  Vapors