机构

• 半导体研究所 [17]
• 金属研究所 [1]
• 高能物理研究所 [1]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [15]
• iSwitch采集 [5]

内容类型

• 期刊论文 [17]
• 会议论文 [3]

发表日期

• 2011 [3]
• 2007 [2]
• 2006 [2]
• 2005 [3]
• 2004 [2]
• 2003 [1]
• 更多

学科主题

• 半导体材料 [10]
• Crystallog... [1]
• 光电子学 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011 作者:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang   |  收藏  |  浏览/下载：30/0  |  提交时间：2012/06/14 Carrier concentration  Etching  Gallium alloys  Optical properties  Point defects  Raman spectroscopy  Semiconducting gallium compounds  Vapor phase epitaxy  Vapors  Carrier Concentration  Etching  Gallium Alloys  Optical Properties  Point Defects  Raman Spectroscopy  Semiconducting Gallium Compounds  Vapor Phase Epitaxy  Vapors   The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文  OAI收割 physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 7, 页码: 1152-1155, 1152-1155 作者:  Liu CR;  Li JB;  Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn;  jbli@semi.ac.cn   |  收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05 First principle calculation  Indium nitride  Band gap  Defect  INITIO MOLECULAR-DYNAMICS  AUGMENTED-WAVE METHOD  INDIUM NITRIDE  GAP  PSEUDOPOTENTIALS  SEMICONDUCTORS  IMPURITIES  ABSORPTION  DEFECTS  ALLOYS  First Principle Calculation  Indium Nitride  Band Gap  Defect  Initio Molecular-dynamics  Augmented-wave Method  Indium Nitride  Gap  Pseudopotentials  Semiconductors  Impurities  Absorption  Defects  Alloys   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun   |  收藏  |  浏览/下载：19/0  |  提交时间：2012/06/14 Buffer layers  Epitaxial growth  Gallium alloys  Indium antimonides  Molecular beam epitaxy  Molecular beams  Optical waveguides  Optimization  Semiconducting gallium arsenide  Semiconductor quantum wells  Tellurium  Tellurium compounds  Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds   Effect of growth conditions on the gan thin film by sputtering deposition 期刊论文  iSwitch采集 Journal of crystal growth, 2007, 卷号: 299, 期号: 2, 页码: 268-271 作者:  Zhang, C. G.;  Bian, L. F.;  Chen, W. D.;  Hsu, C. C. 收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12 Phase equilibria  Radio-frequency magnetron sputtering  Sputtering  Gallium compounds  Gallium nitride  Semiconducting gallium compounds  Semiconducting iii-v materials   Three-dimensional dendrite-like nanostructures of gallium nitride 期刊论文  OAI收割 Journal of Crystal Growth, 2007, 卷号: 308, 期号: 1, 页码: 166-169 Q. F. Meng; C. B. Jiang; S. X. Mao 收藏  |  浏览/下载：12/0  |  提交时间：2012/04/13 nanostructures  gallium compounds  nanomaterials  semiconducting  materials  thermal evaporation  nanowire networks  zinc-oxide  gan  nanobelts  nanorods  zno   Electrical properties of undoped in0.53ga0.47as grown on inp substrates by molecular beam epitaxy 期刊论文  iSwitch采集 Journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 作者:  Cui, L. J.;  Zeng, Y. P.;  Wang, B. Q.;  Zhu, Z. P. 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Characterization  Point defects  Molecular beam epitaxy  Semiconducting gallium compounds  Semiconducting indium compounds  Semiconducting ternary compounds   Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.) 收藏  |  浏览/下载：20/0  |  提交时间：2010/04/11 characterization  point defects  molecular beam epitaxy  semiconducting gallium compounds  semiconducting indium compounds  semiconducting ternary compounds  1.55 MU-M  QUANTUM-WELLS  TEMPERATURE  GAAS   Realization of gaas/algaas quantum-cascade lasers with high average optical power 期刊论文  iSwitch采集 Solid-state electronics, 2005, 卷号: 49, 期号: 12, 页码: 1961-1964 作者:  Liu, JQ;  Liu, FQ;  Lu, XZ;  Guo, Y;  Wang, ZG 收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12 X-ray diffraction  Molecular beam epitaxy  Semiconducting gallium compounds  Quantum-cascade lasers (qcls)   Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 285, 期号: 3, 页码: 333-338 作者:  Hu, CY;  Qin, ZX;  Chen, ZZ;  Yang, ZJ;  Yu, TJ 收藏  |  浏览/下载：10/0  |  提交时间：2016/06/27 x-ray diffraction  gallium compounds  metals  nitrides  semiconducting III-V materials   Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power 期刊论文  OAI收割 solid-state electronics, 2005, 卷号: 49, 期号: 12, 页码: 1961-1964 Liu JQ; Liu FQ; Lu XZ; Guo Y; Wang ZG 收藏  |  浏览/下载：298/3  |  提交时间：2010/04/11 X-ray diffraction  molecular beam epitaxy  semiconducting gallium compounds  quantum-cascade lasers (QCLs)  UNIPOLAR SEMICONDUCTOR-LASERS  MU-M  OPERATION