机构

• 半导体研究所 [25]

采集方式

• OAI收割 [25]

内容类型

• 期刊论文 [21]
• 会议论文 [4]

发表日期

• 2011 [1]
• 2010 [3]
• 2008 [1]
• 2006 [3]
• 2005 [2]
• 2004 [1]
• 更多

学科主题

• 半导体材料 [17]
• 半导体物理 [7]
• 光电子学 [1]

筛选

浏览/检索结果: 共25条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism 期刊论文  OAI收割 solid state communications, SOLID STATE COMMUNICATIONS, 2011, 2011, 卷号: 151, 151, 期号: 6, 页码: 456-459, 456-459 作者:  Wu H;  Gan HD;  Zheng HZ;  Lu J;  Zhu H   |  收藏  |   Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804 Guo X (Guo Xi); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Qiu YX (Qiu Yong-Xin); Xu K (Xu Ke); Yang H (Yang Hui) 收藏  |   Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films 期刊论文  OAI收割 journal of magnetism and magnetic materials, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2010, 2010, 卷号: 322, 322, 期号: 21, 页码: 3250-3254, 3250-3254 作者:  Chen L (Chen L.);  Yan S (Yan S.);  Xu PF (Xu P. F.);  Lu J (Lu J.);  Deng JJ (Deng J. J.)   |  收藏  |   Defects in gallium nitride nanowires: First principles calculations 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 4, 页码: art. no. 044305, Art. No. 044305 作者:  Wang ZG (Wang Zhiguo)   |  收藏  |   High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth 期刊论文  OAI收割 chinese physics b, 2008, 卷号: 17, 期号: 1, 页码: 323-327 She-Song, H; Zhi-Chuan, N; Feng, Z; Hai-Qiao, N; Huan, Z; Dong-Hai, W; Zheng, S 收藏  |   Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.) 收藏  |   Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD 期刊论文  OAI收割 microelectronics journal, 2006, 卷号: 37, 期号: 7, 页码: 583-585 Ran JX; Wang XL; Hu GX; Wang JX; Li JP; Wang CM; Zeng YP; Li JM 收藏  |   Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing 期刊论文  OAI收割 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2579-2582 Zhao H (Zhao Huan); Xu YQ (Xu Ying-Qiang); Ni HQ (Ni Hai-Qiao); Han Q (Han Qin); Wu RH (Wu Rong-Han); Niu ZC (Niu Zhi-Chuan) 收藏  |   A model for scattering due to interface roughness in finite quantum wells 期刊论文  OAI收割 semiconductor science and technology, 2005, 卷号: 20, 期号: 12, 页码: 1207-1212 作者:  Han XX 收藏  |   Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy 期刊论文  OAI收割 acta physica sinica, 2005, 卷号: 54, 期号: 6, 页码: 2950-2954 作者:  Xu YQ;  Niu ZC;  Zhang W;  Jiang DS;  Han Q 收藏  |