机构

• 半导体研究所 [13]

采集方式

• OAI收割 [13]

内容类型

• 期刊论文 [10]
• 会议论文 [3]

发表日期

• 2017 [1]
• 2011 [1]
• 2010 [4]
• 2005 [1]
• 2004 [3]
• 2003 [1]
• 更多

学科主题

• 半导体材料 [13]

筛选

浏览/检索结果: 共13条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Enhanced piezoelectric response of the two-tetragonal-phase-coexisted BiFeO3 epitaxial film 期刊论文  OAI收割 Solid State Communications, 2017, 卷号: 252, 页码: 68–72 作者:  Yajuan Zhao;  Zhigang Yin;  Zhen Fu;  Xingwang Zhang;  Jingbin Zhu 收藏  |  浏览/下载：13/0  |  提交时间：2018/06/01 Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots 期刊论文  OAI收割 physical review b, 2011, 卷号: 83, 期号: 12, 页码: article no.121302 Plumhof JD; Krapek V; Ding F; Jons KD; Hafenbrak R; Klenovsky P; Herklotz A; Dorr K; Michler P; Rastelli A; Schmidt OG 收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 ENTANGLED PHOTON PAIRS  SEMICONDUCTOR  SPIN   Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 107, 期号: 10, 页码: art. no. 104510 Xu XQ (Xu Xiaoqing); Liu XL (Liu Xianglin); Guo Y (Guo Yan); Wang J (Wang Jun); Song HP (Song Huaping); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：182/49  |  提交时间：2010/06/18 PHOTOEMISSION-SPECTROSCOPY  PRECISE DETERMINATION  GA-FACE  SURFACE  ALN  HETEROJUNCTIONS  DISCONTINUITY  LEVEL   Surface roughness scattering in two dimensional electron gas channel 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111 Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG 收藏  |  浏览/下载：48/5  |  提交时间：2011/07/05 MOLECULAR-BEAM EPITAXY  MOBILITY ALGAN/GAN HETEROSTRUCTURES  RAY PHOTOEMISSION SPECTROSCOPY  PERFORMANCE  ALN  MODFETS  INN   Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress 期刊论文  OAI收割 physical review letters, 2010, 卷号: 104, 期号: 6, 页码: art. no. 067405 Ding F; Singh R; Plumhof JD; Zander T; Krapek V; Chen YH; Benyoucef M; Zwiller V; Dorr K; Bester G; Rastelli A; Schmidt OG 收藏  |  浏览/下载：150/37  |  提交时间：2010/04/21 Stretchable Graphene: A Close Look at Fundamental Parameters through Biaxial Straining 期刊论文  OAI收割 nano letters, 2010, 卷号: 10, 期号: 9, 页码: 3453-3458 Ding F (Ding Fei); Ji HX (Ji Hengxing); Chen YH (Chen Yonghai); Herklotz A (Herklotz Andreas); Dorr K (Doerr Kathrin); Mei YF (Mei Yongfeng); Rastelli A (Rastelli Armando); Schmidt OG (Schmidt Oliver G.) 收藏  |  浏览/下载：243/38  |  提交时间：2010/09/20 Graphene  strain engineering  Gruneisen parameters  Raman spectroscopy  piezoelectric actuator   Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2005, 卷号: 27, 期号: 3, 页码: 314-318 Chen, Z; Chua, SJ; Han, PD; Liu, XL; Lu, DC; Zhu, QS; Wang, ZG; Tripathy, S 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/17 GaN   Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 期刊论文  OAI收割 journal of crystal growth, 2004, 卷号: 268, 期号: 3-4, 页码: 504-508 Chen, Z; Chua, SJ; Yuan, HR; Liu, XL; Lu, DC; Han, PD; Wang, ZG 收藏  |  浏览/下载：269/35  |  提交时间：2010/03/09 metalorganic chemical vapor deposition   Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well 期刊论文  OAI收割 journal of vacuum science & technology b, 2004, 卷号: 22, 期号: 6, 页码: 2568-2573 Li, JM; Lu, YW; Li, DB; Han, XX; Zhu, QS; Liu, XL; Wang, ZG 收藏  |  浏览/下载：16/0  |  提交时间：2010/03/17 RAY PHOTOEMISSION SPECTROSCOPY   Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文  OAI收割 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 作者:  Han PD 收藏  |  浏览/下载：83/1  |  提交时间：2010/10/29 metalorganic chemical vapor deposition  semiconducting III-V materials  DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES  CARRIER CONFINEMENT  EFFECT TRANSISTORS  PHOTOLUMINESCENCE  MOBILITY  HETEROJUNCTION  INTERFACE  HFETS