机构

• 半导体研究所 [251]

采集方式

• OAI收割 [251]

内容类型

• 期刊论文 [209]
• 会议论文 [42]

发表日期

• 2014 [3]
• 2012 [3]
• 2011 [11]
• 2010 [7]
• 2009 [18]
• 2008 [16]
• 更多

学科主题

• 半导体材料 [251]

筛选

浏览/检索结果: 共251条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Turning a disadvantage into an advantage:synthesizing high-quality organometallic halide perovskite nanosheet arrays for humidity sensors† 期刊论文  OAI收割 Journal of Materials Chemistry C, 2017, 卷号: 5, 期号: 10, 页码: 2504-2508 作者:  Kuankuan Ren;  Le Huang;  Shizhong Yue;  Shudi Lu;  Kong Liu 收藏  |  浏览/下载：30/0  |  提交时间：2018/06/15 Significant quality improvement of GaN on Si upon formation of an AlN defective layer 期刊论文  OAI收割 crystengcomm, 2014, 卷号: 16, 期号: 32, 页码: 7525-7528 Feng, YX; Wei, HY; Yang, SY; Zhang, H; Kong, SS; Zhao, GJ; Liu, XL 收藏  |  浏览/下载：15/0  |  提交时间：2015/03/25 Monolithically Integrated Amplified Feedback Lasers for High-Quality Microwave and Broadband Chaos Generation 期刊论文  OAI收割 journal of lightwave technology, 2014, 卷号: 32, 期号: 20, 页码: 3595-3601 Yu, Liqiang; Lu, Dan; Pan, Biwei; Zhao, Lingjuan; Wu, Jiagui; Xia, Guangqiong; Wu, Zhengmao; Wang, Wei 收藏  |  浏览/下载：16/0  |  提交时间：2015/03/19 Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer 期刊论文  OAI收割 chinese physics letters, 2014, 卷号: 31, 期号: 12, 页码: 128101 Zhou Xu-Liang; Pan Jiao-Qing; Yu Hong-Yan; Li Shi-Yan; Wang Bao-Jun; Bian Jing; Wang Wei 收藏  |  浏览/下载：13/0  |  提交时间：2015/03/19 Improvement of the surface quality of semi-insulating InP substrates through a novel etching and cleaning method 期刊论文  OAI收割 journal of vacuum science & technology a: vacuum, surfaces, and films, 2013, 卷号: 31, 期号: 3, 页码: 031404 - 031404-5 Jinming Liu, Youwen Zhao, Zhiyuan Dong, Fengyun Yang, Fenghua Wang 收藏  |  浏览/下载：16/0  |  提交时间：2014/03/18 Effects of a ZnTe buffer layer on structural quality and morphology of CdTe epilayer grown on (001)GaAs by molecular beam epitaxy 期刊论文  OAI收割 vacuum, 2012, 卷号: 86, 期号: 8, 页码: 1062-1066 Zhao, J; Zeng, YP; Liu, C; Cui, LJ 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/17 Effects of ambient conditions on the quality of graphene synthesized by chemical vapor deposition 期刊论文  OAI收割 vacuum, 2012, 卷号: 86, 期号: 12, 页码: 1867-1870 Si, F.T; Zhang, X.W; Liu, X; Yin, Z.G; Zhang, S.G; Gao, H.L; Dong, J.J 收藏  |  浏览/下载：8/0  |  提交时间：2013/04/19 High structural quality of type II InAs/GaSb superlattices for very long wavelength infrared detection by interface control 期刊论文  OAI收割 ieee journal of quantum electronics, 2012, 卷号: 48, 期号: 4, 页码: 512-515 Wei, Yang; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Cao, Yulian; Cui, Kai 收藏  |  浏览/下载：8/0  |  提交时间：2013/04/19 Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文  OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: article no.69 作者:  Song HP;  Wei HY;  Li CM;  Jiao CM 收藏  |  浏览/下载：65/4  |  提交时间：2011/07/05 CATHODOLUMINESCENCE CHARACTERIZATION  GALLIUM NITRIDE  STRESSES  LAYERS  HETEROSTRUCTURE  DEPOSITION  CONSTANTS  MECHANISM  SAPPHIRE  STRAIN   MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者:  Jia CH;  Song HP 收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05 Anisotropy  Crystal morphology  Metalorganic chemical vapor deposition  a-Plane InN  INDIUM NITRIDE  MOVPE GROWTH  CUBIC INN  SAPPHIRE  GAN  MBE