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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [178]
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OAI收割 [178]
内容类型
期刊论文 [163]
会议论文 [15]
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2016 [2]
2015 [2]
2012 [2]
2011 [9]
2010 [3]
2009 [8]
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学科主题
半导体物理 [178]
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InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate
期刊论文
OAI收割
journal of crystal growth, 2016, 卷号: 443, 页码: 85-89
Wei Xiang
;
Guowei Wang
;
Hongyue Hao
;
Yongping Liao
;
Xi Han
;
Lichun Zhang
;
Yingqiang Xu
;
Zhengwei Ren
;
Haiqiao Ni
;
Zhenhong He
;
Zhichuan Niu
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2017/03/16
Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate
期刊论文
OAI收割
condensed matter, 2016, 卷号: 27, 期号: 14, 页码: 145704
Xiao-Li Li
;
Xiao-Fen Qiao
;
Wen-Peng Han
;
Xin Zhang
;
Qing-Hai Tan
;
Tao Chen
;
Ping-Heng Tan
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2017/03/16
Optical contrast determination of the thickness of SiO2 film on Si substrate partially covered by two-dimensional crystal flakes
期刊论文
OAI收割
science bulletin, 2015, 卷号: 60, 期号: 8, 页码: 806-811
Yan Lu
;
Xiao-Li Li
;
Xin Zhang
;
Jiang-Bin Wu
;
Ping-Heng Tan
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2016/03/29
Substrate-free layer-number identification of two-dimensional materials: A case of Mo0.5W0.5S2 alloy
期刊论文
OAI收割
applied physics letters, 2015, 卷号: 106, 期号: 22, 页码: 223102
Xiao-Fen Qiao
;
Xiao-Li Li
;
Xin Zhang
;
Wei Shi
;
Jiang-Bin Wu
;
Tao Chen
;
Ping-Heng Tan
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2016/03/29
Field-Field and Photon-Photon Correlations of Light Scattered by Two Remote Two-Level InAs Quantum Dots on the Same Substrate
期刊论文
OAI收割
physical review letters, PHYSICAL REVIEW LETTERS, 2013, 2013, 卷号: 109, 109, 期号: 26, 页码: 267402, 267402
作者:
Konthasinghe, K.
;
Peiris, M.
;
Yu, Y.
;
Li, M. F.
;
He, J. F.
  |  
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2013/10/10
Field-Field and Photon-Photon Correlations of Light Scattered by Two Remote Two-Level InAs Quantum Dots on the Same Substrate
期刊论文
OAI收割
physical review letters, PHYSICAL REVIEW LETTERS, 2012, 2012, 卷号: 109, 109, 期号: 26, 页码: 267402, 267402
作者:
Konthasinghe K (Konthasinghe, K.)
;
Peiris M (Peiris, M.)
;
Yu Y (Yu, Y.)
;
Li MF (Li, M. F.)
;
He JF (He, J. F.)
  |  
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2013/03/20
Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application
期刊论文
OAI收割
materials, MATERIALS, 2012, 2012, 卷号: 5, 5, 期号: 12, 页码: 2917-2926, 2917-2926
作者:
Shi YB (Shi, Yunbo)
;
Guo H (Guo, Hao)
;
Ni HQ (Ni, Haiqiao)
;
Xue CY (Xue, Chenyang)
;
Niu ZC (Niu, Zhichuan)
  |  
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2013/03/26
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:32/2
  |  
提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004
作者:
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
  |  
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Atomic Force Microscopy
Buffer Layers
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Germanium
Growth Temperature
High Resolution Transmission Electron Microscopy
Molecular Beam Epitaxy
Molecular Beams
Semiconducting Gallium
Semiconductor Device Structures
Semiconductor Quantum Wells
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
期刊论文
OAI收割
optoelectronics letters, Optoelectronics Letters, 2011, 2011, 卷号: 7, 7, 期号: 5, 页码: 325-329, 325-329
作者:
Zhu, Yan
;
Ni, Hai-qiao
;
Wang, Hai-li
;
He, Ji-fang
;
Li, Mi-feng
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/06/14
Epitaxial growth
Gallium arsenide
Growth(materials)
Molecular beam epitaxy
Semiconducting gallium
Semiconducting indium
Semiconductor quantum wells
Epitaxial Growth
Gallium Arsenide
Growth(Materials)
Molecular Beam Epitaxy
Semiconducting Gallium
Semiconducting Indium
Semiconductor Quantum Wells