机构

• 半导体研究所 [16]

采集方式

• OAI收割 [16]

内容类型

• 期刊论文 [14]
• 会议论文 [2]

发表日期

• 2017 [1]
• 2010 [2]
• 2009 [5]
• 2008 [2]
• 2006 [1]
• 2003 [2]
• 更多

学科主题

• 半导体物理 [16]

筛选

浏览/检索结果: 共16条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides 期刊论文  OAI收割 PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 20, 页码: 205303 作者:  Le Huang;  Lin Tao;  Kai Gong;  Yongtao Li;  Huafeng Dong 收藏  |  浏览/下载：31/0  |  提交时间：2018/06/15 First-principles study of UC2 and U2C3 期刊论文  OAI收割 journal of nuclear materials, JOURNAL OF NUCLEAR MATERIALS, 2010, 2010, 卷号: 396, 396, 期号: 2-3, 页码: 218-222, 218-222 作者:  Shi HL (Shi Hongliang);  Zhang P (Zhang Ping);  Li SS (Li Shu-Shen);  Wang BT (Wang Baotian);  Sun B (Sun Bo)   |  收藏  |  浏览/下载：78/12  |  提交时间：2010/04/21 First-principle calculation  First-principle Calculation  Gga Plus u  Elastic Constants  Chemical Bonding  Valence State  Brillouin-zone Integrations  Carbides  Spectra  Metals  GGA plus U  Elastic constants  Chemical bonding  Valence state  BRILLOUIN-ZONE INTEGRATIONS  CARBIDES  SPECTRA  METALS   Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 107, 107, 期号: 7, 页码: art. no. 073108, Art. No. 073108 作者:  Zhu YH (Zhu Yuan-Hui);  Xu Q (Xu Qiang);  Fan WJ (Fan Wei-Jun);  Wang JW (Wang Jian-Wei);  Zhu, YH, Nanyang Technol Univ, Sch EEE, 50 Nanyang Ave, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg   |  收藏  |  浏览/下载：67/3  |  提交时间：2010/05/07 ALLOYS  Alloys  Ge  GE   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 142109 作者:  Zhang XH;  Chen L 收藏  |  浏览/下载：108/22  |  提交时间：2010/03/08 Curie temperature  ferromagnetic materials  gallium compounds  Kerr magneto-optical effect  magnetic relaxation  magnetic thin films  manganese compounds  semimagnetic semiconductors  spin dynamics  time resolved spectra   Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者:  Qian X 收藏  |  浏览/下载：79/7  |  提交时间：2010/03/08 aluminium compounds  carrier lifetime  gallium arsenide  high-frequency effects  III-V semiconductors  optical Kerr effect  semiconductor heterojunctions  spin dynamics  two-dimensional electron gas   First-Principles Study of Magnetic Properties of 3d Transition Metals Doped in ZnO Nanowires 期刊论文  OAI收割 nanoscale research letters, 2009, 卷号: 4, 期号: 5, 页码: 480-484 Shi HL; Duan YF 收藏  |  浏览/下载：233/55  |  提交时间：2010/03/08 First-principles  Transition-metals  Formation energies  Nanowires  Magnetism   Room Temperature Ferromagnetism of Mn Implanted AlInN 期刊论文  OAI收割 japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 040202 Majid A; Sharif R; Ali A; Zhu JJ 收藏  |  浏览/下载：248/25  |  提交时间：2010/03/08 MAGNETIC-PROPERTIES  SEMICONDUCTORS  GAN  CR  ALLOYS  GROWTH  FILMS   First-principles study of the electronic structures and magnetic properties of 3d transition metal-doped anatase TiO2 期刊论文  OAI收割 journal of physics-condensed matter, 2008, 卷号: 20, 期号: 12, 页码: art. no. 125207 Peng, HW; Li, JB; Li, SS; Xia, JB 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/08 TITANIUM-DIOXIDE  ROOM-TEMPERATURE  SEMICONDUCTORS  FERROMAGNETISM  MODEL   First-principles study of transition metal impurities in Si 期刊论文  OAI收割 physical review b, 2008, 卷号: 77, 期号: 15, 页码: art. no. 155201 Zhang ZZ; Partoens B; Chang K; Peeters FM 收藏  |  浏览/下载：61/7  |  提交时间：2010/03/08 SILICON