机构

• 半导体研究所 [27]

采集方式

• OAI收割 [27]

内容类型

• 期刊论文 [26]
• 会议论文 [1]

发表日期

• 2016 [4]
• 2015 [2]
• 2014 [4]
• 2013 [7]
• 2012 [4]
• 2010 [1]
• 更多

学科主题

• 半导体器件 [27]

筛选

浏览/检索结果: 共27条，第1-10条 帮助 限定条件 学科主题：半导体器件     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes 期刊论文  OAI收割 chinese physics letters, 2016, 卷号: 33, 期号: 11, 页码: 117302 Ning Zhang; Xue-Cheng Wei; Kun-Yi Lu; Liang-Sen Feng; Jie Yang; Bin Xue; Zhe Liu; Jin-Min Li and Jun-Xi Wang 收藏  |  浏览/下载：22/0  |  提交时间：2017/03/16 GaN nanowire arrays by a patterned metal-assisted chemical etching 期刊论文  OAI收割 journal of crystal growth, 2016, 卷号: 440, 页码: 96-101 K.C. Wang; G.D.Yuan n; R.W.Wu; H.X.Lu; Z.Q.Liu; T.B.Wei; J.X.Wang; J.M.Li; W.J.Zhang 收藏  |  浏览/下载：20/0  |  提交时间：2017/03/16 The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior 期刊论文  OAI收割 aip advances, 2016, 卷号: 6, 期号: 2, 页码: 025305 Bahadir Kucukgok; Xuewang Wu; Xiaojia Wang; Zhiqiang Liu; Ian T. Ferguson; Na Lu 收藏  |  浏览/下载：14/0  |  提交时间：2017/03/16 Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides 期刊论文  OAI收割 scientific reports, 2016, 卷号: 6, 页码: 19537 Zhiqiang Liu; Xiaoyan Yi; Zhiguo Yu; Gongdong Yuan; Yang Liu; Junxi Wang; Jinmin Li; Na Lu; Ian Ferguson; Yong Zhang 收藏  |  浏览/下载：12/0  |  提交时间：2017/03/16 Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode 期刊论文  OAI收割 rsc advances, RSC Advances, 2015, 2015, 卷号: 5, 5, 页码: 100646–100650, 100646–100650 作者:  Binglei Fu;  Yan Cheng;  Zhao Si;  Tongbo Wei;  Xionghui Zeng   |  收藏  |  浏览/下载：16/0  |  提交时间：2016/04/15 Fabrication of GaN-based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching 期刊论文  OAI收割 physica status solidi a, Physica Status Solidi A, 2015, 2015, 卷号: 212, 212, 期号: 10, 页码: 2341–2344, 2341–2344 作者:  Wanyong Li;  Yi Luo;  Bing Xiong;  Changzheng Sun;  Lai Wang   |  收藏  |  浏览/下载：16/0  |  提交时间：2016/04/15 Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer 期刊论文  OAI收割 optics express, OPTICS EXPRESS, 2014, 2014, 卷号: 22, 22, 期号: 21, 页码: a1596-a1603, A1596-A1603 作者:  Yu, Zhi-Guo;  Zhao, Li-Xia;  Wei, Xue-Cheng;  Lu, Hong-Xi;  Wang, Jun-Xi   |  收藏  |  浏览/下载：17/0  |  提交时间：2015/03/19 Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2014, 2014, 卷号: 115, 115, 期号: 12, 页码: 123101, 123101 作者:  Wu, K;  Wei, TB;  Zheng, HY;  Lan, D;  Wei, XC   |  收藏  |  浏览/下载：23/0  |  提交时间：2015/04/02 The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing 期刊论文  OAI收割 aip advances, AIP ADVANCES, 2014, 2014, 卷号: 4, 4, 期号: 2, 页码: 027123, 027123 作者:  Zhang, YH;  Wei, TB;  Wang, JX;  Lan, D;  Chen, Y   |  收藏  |  浏览/下载：14/0  |  提交时间：2015/03/20 Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes 期刊论文  OAI收割 optics express, OPTICS EXPRESS, 2014, 2014, 卷号: 22, 22, 期号: 9, 页码: a1001-a1008, A1001-A1008 作者:  Ji, XL;  Wei, TB;  Yang, FH;  Lu, HX;  Wei, XC   |  收藏  |  浏览/下载：14/0  |  提交时间：2015/04/02