中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体研究所 [173]
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Realization low resistivity of high AlN mole fraction Si-doped AlGaN by suppressing the formation native vacancies 期刊论文  OAI收割
JOURNAL OF CRYSTAL GROWTH, 2021, 卷号: 570, 页码: 126245
作者:  
Yang, J.;   Zhang, Y. H.;   Zhao, D. G.;   Chen, P.;   Liu, Z. S.;   Liang, F.
  |  收藏  |  浏览/下载:9/0  |  提交时间:2022/05/19
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers 期刊论文  OAI收割
JOURNAL OF APPLIED PHYSICS, 2021, 卷号: 130, 期号: 17, 页码: 173105
作者:  
Yang, J.;   Wang, B. B.;   Zhao, D. G.;   Liu, Z. S.;   Liang, F.;   Chen, P.;   Zhang, Y. H.;   Zhang, Z. Z.
  |  收藏  |  浏览/下载:5/0  |  提交时间:2022/03/24
Direct growth of wafer-scale highly oriented graphene on sapphire 期刊论文  OAI收割
SCIENCE ADVANCES, 2021, 卷号: 7, 期号: 47, 页码: eabk0115
作者:  
Chen, Zhaolong;   Xie, Chunyu;   Wang, Wendong;   Zhao, Jinpei;   Liu, Bingyao;   Shan, Jingyuan;   Wang, Xueyan;   Hong, Min;   Lin, Li;   Huang, Li;   Lin, Xiao;   Yang, Shenyuan;   Gao, Xuan;   Zhang, Yanfeng;   Gao, Peng;   Novoselov, Kostya S.;   Sun, Jingyu;   Liu, Zhongfan
  |  收藏  |  浏览/下载:41/0  |  提交时间:2022/03/24
Improved stability and efficiency of perovskite via a simple solid diffusion method 期刊论文  OAI收割
MATERIALS TODAY PHYSICS, 2021, 卷号: 18, 页码: 100374
作者:  
Wang, W.;   Guo, R.;   Xiong, X.;   Liu, H.;   Chen, W.;   Hu, S.;   Amador, E.;   Chen, B.;   Zhang, X.;   Wang, L
  |  收藏  |  浏览/下载:7/0  |  提交时间:2022/07/15
Observation of Strong Bulk Damping‐Like Spin‐Orbit Torque in Chemically Disordered Ferromagnetic Single Layers 期刊论文  OAI收割
ADVANCED FUNCTIONAL MATERIALS, 2020, 卷号: 30, 期号: 48, 页码: 2005201
作者:  
Lijun Zhu;   Xiyue S. Zhang;   David A. Muller;   Daniel C. Ralph;   Robert A. Buhrman
  |  收藏  |  浏览/下载:3/0  |  提交时间:2021/05/25
High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture 期刊论文  OAI收割
ACS APPLIED ELECTRONIC MATERIALS, 2020, 卷号: 2, 期号: 1, 页码: 111-119
作者:  
Fuyou Liao;   Zhongxun Guo;   Yin Wang;   Yufeng Xie;   Simeng Zhang;   Yaochen Sheng;   Hongwei Tang;   Zihan Xu;   Antoine Riaud;   Peng Zhou;   Jing Wan;   Michael S. Fuhrer;   Xiangwei Jiang;   David Wei Zhang;   Yang Chai;   Wenzhong Bao
  |  收藏  |  浏览/下载:9/0  |  提交时间:2021/12/21
Interfacial influence on electrical injection and transport characterization of CoFeB|MgO|GaAs-InGaAs quantum wells hetero-structure 期刊论文  OAI收割
Applied Surface Science, 2019, 卷号: 473, 页码: 230-234
作者:  
Y. Tian ;   C. Zhang ;   C. Xiao ;   R. Wang ;   L. Xu ;   X. Devaux ;   Pierre Renucci ;   B. Xu ;   S. Liang ;   C. Yang ;   Y. Lu
  |  收藏  |  浏览/下载:15/0  |  提交时间:2020/07/30
Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy 期刊论文  OAI收割
PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 4, 页码: 045116
作者:  
Y. Jiang;  S. Thapa;  G. D. Sanders;  C. J. Stanton;  Q. Zhang
  |  收藏  |  浏览/下载:40/0  |  提交时间:2018/06/01
Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文  OAI收割
Scientific Reports, 2017, 卷号: 7, 页码: 44850
作者:  
J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu
  |  收藏  |  浏览/下载:23/0  |  提交时间:2018/11/30
Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文  OAI收割
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
作者:  
J. YANG;  D. G. ZHAO;  D. S. JIANG;  X. LI;  F. LIANG
  |  收藏  |  浏览/下载:21/0  |  提交时间:2018/11/30