中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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发表日期
  • 2012 [8]
学科主题
  • 光电子学 [8]
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浏览/检索结果: 共8条,第1-8条 帮助

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Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文  OAI收割
applied physics letters, 2012, 卷号: 101, 期号: 25, 页码: 252110
Le, L.C; Zhao, D.G; Jiang, D.S; Zhang, S.M; Yang, H; Li, L; Wu, L.L; Chen, P; Liu, Z.S; Li, Z.C; Fan, Y.M; Zhu, J.J; Wang, H
收藏  |  浏览/下载:16/0  |  提交时间:2013/04/19
Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire 期刊论文  OAI收割
journal of alloys and compounds, 2012, 卷号: 544, 页码: 94-98
Zhao, D.G; Jiang, D.S; Wu, L.L; Le, L.C; Li, L; Chen, P; Liu, Z.S; Zhu, J.J; Wang, H; Zhang, S.M; Yang, H
收藏  |  浏览/下载:18/0  |  提交时间:2013/05/07
Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文  OAI收割
journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 053104
Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Wu LL (Wu, L. L.); Li L (Li, L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.)
收藏  |  浏览/下载:7/0  |  提交时间:2013/04/02
Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文  OAI收割
journal of alloys and compounds, 2012, 卷号: 540, 页码: 46-48
Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui)
收藏  |  浏览/下载:12/0  |  提交时间:2013/03/27
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文  OAI收割
applied physics letters, 2012, 卷号: 101, 期号: 25, 页码: 252110
Le, L.C; Zhao, D.G; Jiang, D.S; Zhang, S.M; Yang, H; Li, L; Wu, L.L; Chen, P; Liu, Z.S; Li, Z.C; Fan, Y.M; Zhu, J.J; Wang, H
收藏  |  浏览/下载:21/0  |  提交时间:2013/04/19
Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文  OAI收割
semiconductor science and technology, 2012, 卷号: 27, 期号: 8, 页码: 085017
Wu LL (Wu, L. L.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Chen P (Chen, P.); Le LC (Le, L. C.); Li L (Li, L.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang BS (Zhang, B. S.); Yang H (Yang, H.)
收藏  |  浏览/下载:7/0  |  提交时间:2013/04/02
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2012, 2012, 卷号: 101, 101, 期号: 25, 页码: 252110, 252110
作者:  
  |  收藏  |  浏览/下载:17/0  |  提交时间:2013/03/20
Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文  OAI收割
semiconductor science and technology, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 2012, 卷号: 27, 27, 期号: 8, 页码: 85017, 85017
作者:  
Wu, LL;  Zhao, DG;  Jiang, DS;  Chen, P;  Le, LC
  |  收藏  |  浏览/下载:11/0  |  提交时间:2013/03/17