机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [14]

发表日期

• 2012 [14]

学科主题

• 光电子学 [14]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 学科主题：光电子学    发表日期：2012     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Distribution of electric field and design of devices in GaN avalanche photodiodes 期刊论文  OAI收割 science china-physics mechanics & astronomy, 2012, 卷号: 55, 期号: 4, 页码: 619-624 Wu, LL; Zhao, DG; Deng, Y; Jiang, DS; Zhu, JJ; Wang, H; Liu, ZS; Zhang, SM; Zhang, BS; Yang, H 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/17 Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 25, 页码: 252110 Le, L.C; Zhao, D.G; Jiang, D.S; Zhang, S.M; Yang, H; Li, L; Wu, L.L; Chen, P; Liu, Z.S; Li, Z.C; Fan, Y.M; Zhu, J.J; Wang, H 收藏  |  浏览/下载：16/0  |  提交时间：2013/04/19 Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire 期刊论文  OAI收割 journal of alloys and compounds, 2012, 卷号: 544, 页码: 94-98 Zhao, D.G; Jiang, D.S; Wu, L.L; Le, L.C; Li, L; Chen, P; Liu, Z.S; Zhu, J.J; Wang, H; Zhang, S.M; Yang, H 收藏  |  浏览/下载：18/0  |  提交时间：2013/05/07 Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文  OAI收割 journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 053104 Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Wu LL (Wu, L. L.); Li L (Li, L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.) 收藏  |  浏览/下载：7/0  |  提交时间：2013/04/02 Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of alloys and compounds, 2012, 卷号: 540, 页码: 46-48 Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui) 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/27 Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration? 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 19, 页码: 191102 Zheng CC (Zheng, C. C.); Xu SJ (Xu, S. J.); Zhang F (Zhang, F.); Ning JQ (Ning, J. Q.); Zhao DG (Zhao, D. G.); Yang H (Yang, H.); Che CM (Che, C. M.) 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/27 Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文  OAI收割 journal of crystal growth, 2012, 卷号: 348, 期号: 1, 页码: 25-30 Zhu, JJ; Fan, YM; Zhang, H; Lu, GJ; Wang, H; Zhao, DG; Jiang, DS; Liu, ZS; Zhang, SM; Chen, GF; Zhang, BS; Yang, H 收藏  |  浏览/下载：17/0  |  提交时间：2013/02/27 Femtosecond laser lithography technique for submicron T-gate fabrication on positive photoresist 期刊论文  OAI收割 optical engineering, 2012, 卷号: 51, 期号: 5, 页码: 54303 Du, YD; Han, WH; Yan, W; Xu, XN; Zhang, YB; Wang, XD; Yang, FH; Cao, HZ; Jin, F; Dong, XZ; Zhao, ZS; Duan, XM; Liu, Y 收藏  |  浏览/下载：11/0  |  提交时间：2013/03/17 Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN 期刊论文  OAI收割 chinese physics letters, 2012, 卷号: 29, 期号: 1, 页码: 17301 Zeng, C; Zhang, SM; Wang, H; Liu, JP; Wang, HB; Li, ZC; Feng, MX; Zhao, DG; Liu, ZS; Jiang, DS; Yang, H 收藏  |  浏览/下载：10/0  |  提交时间：2013/03/17 Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 25, 页码: 252110 Le, L.C; Zhao, D.G; Jiang, D.S; Zhang, S.M; Yang, H; Li, L; Wu, L.L; Chen, P; Liu, Z.S; Li, Z.C; Fan, Y.M; Zhu, J.J; Wang, H 收藏  |  浏览/下载：20/0  |  提交时间：2013/04/19