机构

• 半导体研究所 [10]

采集方式

• OAI收割 [10]

内容类型

• 会议论文 [10]

发表日期

• 2008 [1]
• 2006 [1]
• 2001 [1]
• 2000 [2]
• 1999 [2]
• 1998 [3]
• 更多

学科主题

• 半导体材料 [10]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 内容类型：会议论文    学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文  OAI收割 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX  GROWTH  LASERS  GAAS   Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文  OAI收割 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ 收藏  |  浏览/下载：132/26  |  提交时间：2010/03/29 anodic alumina films   Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW 收藏  |  浏览/下载：21/0  |  提交时间：2010/11/15 X-ray diffraction  nitrides  semiconducting III-V materials  PHASE  FILMS   Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文  OAI收割 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 quantum dots  high index  molecular beam epitaxy  photoluminescence  SURFACE SEGREGATION  ORIENTED GAAS  INGAAS  ISLANDS  WELLS  DISKS   Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文  OAI收割 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 self-assembled quantum dots  InP substrate  high index  In(Ga,Al)As/InAlAs/InP  MBE  MOLECULAR-BEAM-EPITAXY  VAPOR-PHASE EPITAXY  GAAS  ISLANDS  PHOTOLUMINESCENCE  INP(001)  GROWTH  LASERS   Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) 会议论文  OAI收割 40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998 作者:  Xu B 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 bimodal distribution  photoluminescence (PL)  quantum-size effect  GE  ENSEMBLES  SI(100)  GROWTH  SHAPE   High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers 会议论文  OAI收割 1999 ieee hong kong electron devices meeting (hkedm 99), shatin, hong kong, 36337 作者:  Xu B 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29 The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process 会议论文  OAI收割 symposium on nitride semiconductors, at the 1997 mrs fall meeting, boston, ma, dec 01-05, 1997 Zheng LX; Liang JW; Yang H; Li JB; Wang YT; Xu DP; Li XF; Duan LH; Hu XW 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 Room-temperature continuous-wave lasing from InAs GaAs quantum dot laser grown by molecular beam epitaxy 会议论文  OAI收割 5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998 作者:  Xu B 收藏  |  浏览/下载：7/0  |  提交时间：2010/10/29 THRESHOLD  OPERATION  LAYER   Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix 会议论文  OAI收割 6th international conference on the formation of semiconductor interfaces (icfsi-6), cardiff, wales, jun 23-27, 1997 作者:  Xu B 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15 ZNSE/GAAS INTERFACE  STATES