机构

• 半导体研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [11]
• 会议论文 [1]

发表日期

• 2014 [1]
• 2012 [4]
• 2011 [6]
• 2008 [1]

学科主题

• 光电子学 [9]
• 半导体材料 [2]
• 半导体器件 [1]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector 期刊论文  OAI收割 chinese science bulletin, 2014, 卷号: 59, 期号: 28, 页码: 3696-3700 Li, Q; Ma, WQ; Zhang, YH; Cui, K; Huang, JL; Wei, Y; Liu, K; Cao, YL; Wang, WY; Liu, YL; Jin, P 收藏  |  浏览/下载：20/0  |  提交时间：2015/03/20 Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2012, 卷号: 45, 页码: 173-176 Cui K (Cui, Kai); Ma WQ (Ma, Wenquan); Huang JL (Huang, Jianliang); Wei Y (Wei, Yang); Zhang YH (Zhang, Yanhua); Cao YL (Cao, Yulian); Gu YX (Gu, Yongxian); Yang T (Yang, Tao) 收藏  |  浏览/下载：19/0  |  提交时间：2013/04/02 Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiOxNy Passivation 期刊论文  OAI收割 japanese journal of applied physics, 2012, 卷号: 51, 期号: 7，part 1, 页码: 74002 Huang, JL; Ma, WQ; Cao, YL; Wei, Y; Zhang, YH; Cui, K; Deng, GR; Shi, YL 收藏  |  浏览/下载：16/0  |  提交时间：2013/02/25 How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m 期刊论文  OAI收割 ieee journal of quantum electronics, 2012, 卷号: 48, 期号: 10, 页码: 1322-1326 Huang JL (Huang, Jianliang); Ma WQ (Ma, Wenquan); Wei Y (Wei, Yang); Zhang YH (Zhang, Yanhua); Cui K (Cui, Kai); Cao YL (Cao, Yulian); Guo XL (Guo, Xiaolu); Shao J (Shao, Jun) 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/26 Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 100, 期号: 17, 页码: 173511 Zhang, YH; Ma, WQ; Wei, Y; Cao, YL; Huang, JL; Cui, K; Guo, XL 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/17 Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.103507 作者:  Wei Y;  Huo YH;  Zhang YH;  Huang JL;  Ma WQ 收藏  |  浏览/下载：64/4  |  提交时间：2011/07/06 MU-M  DETECTOR  TEMPERATURE  GROWTH   Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 99, 期号: 2, 页码: 23502 Cui K; Ma WQ; Zhang YH; Huang JL; Wei Y; Cao YL; Jin Z; Bian LF 收藏  |  浏览/下载：12/0  |  提交时间：2012/02/06 DETECTOR   Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.103501 作者:  Cui K;  Wei Y;  Huo YH;  Zhang YH 收藏  |  浏览/下载：52/2  |  提交时间：2011/07/06 Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-Like and Mixed Interfaces 期刊论文  OAI收割 ieee journal of quantum electronics, 2011, 卷号: 47, 期号: 12, 页码: 1475-1479 Zhang, YH; Ma, WQ; Cao, YL; Huang, JL; Wei, Y; Cui, K; Shao, J 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06 InAs/GaSb  interfaces  long wavelength infrared photodetector  type II superlattice  DETECTORS  GROWTH   Dual-band quantum well infrared photodetectors with two ohmic contacts 期刊论文  OAI收割 acta physica sinica, 2011, 卷号: 60, 期号: 9, 页码: 98401 Huo YH; Ma WQ; Zhang YH; Huang JL; Wei Y; Cui K; Chen LH 收藏  |  浏览/下载：35/0  |  提交时间：2012/02/06 FOCAL-PLANE ARRAYS  SIMULTANEOUSLY WORKING  MU-M  DETECTOR