机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [10]
• 会议论文 [1]

发表日期

• 2014 [1]
• 2013 [1]
• 2012 [1]
• 2009 [1]
• 2008 [2]
• 2007 [1]
• 更多

学科主题

• 光电子学 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet 期刊论文  OAI收割 chinese science bulletin, CHINESE SCIENCE BULLETIN, 2014, 2014, 卷号: 59, 59, 期号: 16, 页码: 1903-1906, 1903-1906 作者:  Zeng, C;  Zhang, SM;  Liu, JP;  Li, DY;  Jiang, DS   |  收藏  |  浏览/下载：23/0  |  提交时间：2015/03/25 A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe 期刊论文  OAI收割 chinese physics letters, CHINESE PHYSICS LETTERS, 2013, 2013, 卷号: 30, 30, 期号: 10, 页码: 104205, 104205 作者:  Chen, P;  Zhao, DG;  Feng, MX;  Jiang, DS;  Liu, ZS   |  收藏  |  浏览/下载：17/0  |  提交时间：2014/04/09 Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers 期刊论文  OAI收割 chinese physics letters, 2012, 卷号: 29, 期号: 9, 页码: 096101 Sun HH (Sun He-Hui); Guo FY (Guo Feng-Yun); Li DY (Li Deng-Yue); Wang L (Wang Lu); Zhao DG (Zhao De-Gang); Zhao LC (Zhao Lian-Cheng) 收藏  |  浏览/下载：13/0  |  提交时间：2013/04/02 Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文  OAI收割 acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420 作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG 收藏  |  浏览/下载：49/4  |  提交时间：2010/03/08 InN  dislocation  carrier origination  localization   Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G 会议论文  OAI收割 6th international conference on thin film physics and applications, shanghai, peoples r china, sep 25-28, 2007 作者:  Chen P 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 pockels effect   Enhancement of electroluminescence in p-i-n structures with nano-crystalline Si/SiO2 multilayers 期刊论文  OAI收割 semiconductor science and technology, 2008, 卷号: 23, 期号: 1, 页码: art. no. 015013 Chen DY; Wei DY; Xu J; Han PG; Wang X; Ma ZY; Chen KJ; Shi WH; Wang QM 收藏  |  浏览/下载：45/1  |  提交时间：2010/03/08 SILICON NANOCRYSTALS   Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer 期刊论文  OAI收割 applied physics letters, 2007, 卷号: 91, 期号: 3, 页码: art.no.031103 作者:  Chen P 收藏  |  浏览/下载：74/0  |  提交时间：2010/03/29 QUANTUM-WELLS   Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文  OAI收割 applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050 作者:  Zhang SM 收藏  |  浏览/下载：83/0  |  提交时间：2010/04/11 nitrides  multiple quantum wells  cracks  dislocations  vacancies x-ray diffraction  X-RAY-DIFFRACTION  EDGE DISLOCATIONS  GAN  FILMS  SUPERLATTICES  RELAXATION  STRAIN   Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 269-272 Huang Y (Huang Y.); Wang H (Wang H.); Sun Q (Sun Q.); Chen J (Chen J.); Li DY (Li D. Y.); Zhang JC (Zhang J. C.); Wang JF (Wang J. F.); Wang YT (Wang Y. T.); Yang H (Yang H.) 收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11 growth mode  X-ray diffraction  metalorganic chemical vapor deposition  indium nitride  X-RAY-DIFFRACTION  THREADING DISLOCATIONS  ELECTRON-TRANSPORT  BUFFER LAYER  THIN-FILMS  GAN FILMS  SAPPHIRE  ALN   Characteristics of InGaN multiple quantum well blue-violet laser diodes 期刊论文  OAI收割 science in china series e-technological sciences, 2006, 卷号: 49, 期号: 6, 页码: 727-732 Li DY (Li Deyao); Zhang SM (Zhang Shuming); Wang JF (Wang Jianfeng); Chen J (Chen Jun); Chen LH (Chen Lianghui); Chong M (Chong Ming); Zhu JJ (Zhu Jianjun); Zhao DG (Zhao Degang); Liu ZS (Liu Zongshun); Yang H (Yang Hui); Liang JW (Liang Junwu) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 metalorganic chemical vapor deposition (MOCVD)  GaN-hased laser diodes  multiple quantum well  ridge waveguide  threshold current  ELECTRICAL-PROPERTIES  GAN SUBSTRATE  CONTACTS