机构

• 半导体研究所 [43]

采集方式

• OAI收割 [43]

内容类型

• 期刊论文 [40]
• 会议论文 [3]

发表日期

• 2017 [1]
• 2016 [2]
• 2015 [2]
• 2013 [11]
• 2012 [3]
• 2011 [6]
• 更多

学科主题

• 半导体材料 [43]

筛选

浏览/检索结果: 共43条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance 期刊论文  OAI收割 Superlattices and Microstructures, 2017, 卷号: 109, 页码: 194-200 作者:  Shiming Liu;  Quan Wang;  Hongling Xiao;  Kun Wang;  Cuimei Wang 收藏  |  浏览/下载：33/0  |  提交时间：2018/05/23 Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs 期刊论文  OAI收割 semiconductor science and technology, 2016, 卷号: 31, 期号: 12, 页码: 125003 Wei Li; Quan Wang; Xiangmi Zhan; Junda Yan; Lijuan Jiang; Haibo Yin; Jiamin Gong; Xiaoliang Wang; Fengqi Liu; Baiquan Li; Zhanguo Wang 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10 Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases 期刊论文  OAI收割 journal of applied physics, 2016, 卷号: 120, 期号: 12, 页码: 124501 Junda Yan; Quan Wang; Xiaoliang Wang; Chun Feng; Hongling Xiao; Shiming Liu; Jiamin Gong; Fengqi Liu; Baiquan Li 收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10 Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文  OAI收割 phys. status solidi a, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161 He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou 收藏  |  浏览/下载：30/0  |  提交时间：2016/03/29 A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor 期刊论文  OAI收割 chin. phys. lett., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504 Lei Cui; Quan Wang; XiaoLiang Wang; HongLing Xiao; CuiMei Wang; LiJuan Jiang; Chun Feng; HaiBo Yin; JiaMin Gong; BaiQuan Li; ZhanGuo Wang 收藏  |  浏览/下载：27/0  |  提交时间：2016/03/29 Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文  OAI收割 journal of applied physics, 2013, 卷号: 114, 期号: 15, 页码: 4507 Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang 收藏  |  浏览/下载：22/0  |  提交时间：2014/03/18 Growth and characterization of AlGaNAlNGaNAlGaN double heterojunction structures with AlGaN as buffer layers 期刊论文  OAI收割 journal of crystal growth, 2013, 卷号: 383, 页码: 25–29 Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang 收藏  |  浏览/下载：14/0  |  提交时间：2014/03/18 Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier 期刊论文  OAI收割 applied physics express, 2013, 卷号: 6, 期号: 5, 页码: 051201 Kong, Xin; Wei, Ke; Liu, Guoguo; Liu, Xinyu; Wang, Cuimei; Wang, Xiaoliang 收藏  |  浏览/下载：10/0  |  提交时间：2013/08/27 High performance AlGaNGaN power switch with Si3N4 Insulation 期刊论文  OAI收割 the european physical journal applied physics, 2013, 卷号: 61, 期号: 1, 页码: 10101 Lin, Defeng; Wang, Xiaoliang; Xiao, Hongling; Kang, He; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong; Deng, Qingwen; Bi, Yang; Zhang, Jingwen; Hou, Xun 收藏  |  浏览/下载：25/0  |  提交时间：2014/03/18 Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate 期刊论文  OAI收割 journal of semiconductors, 2013, 卷号: 34, 期号: 12, 页码: 124004 Jing, Liang; Xiao, Hongling; Wang, Xiaoliang; Wang, Cuimei; Deng, Qingwen; Li, Zhidong; Ding, Jieqin; Wang, Zhanguo; Hou, Xun 收藏  |  浏览/下载：15/0  |  提交时间：2014/04/28