机构

• 半导体研究所 [27]

采集方式

• OAI收割 [27]

内容类型

• 期刊论文 [24]
• 会议论文 [3]

发表日期

• 2012 [1]
• 2006 [1]
• 2005 [2]
• 2004 [3]
• 2001 [2]
• 2000 [4]
• 更多

学科主题

• 半导体材料 [27]

筛选

浏览/检索结果: 共27条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes 期刊论文  OAI收割 optics express, OPTICS EXPRESS, 2012, 2012, 卷号: 20, 20, 期号: 6, 页码: 6808-6815, 6808-6815 作者:  Zhang, YY;  Xie, HZ;  Zheng, HY;  Wei, TB;  Yang, H   |  收藏  |  浏览/下载：17/0  |  提交时间：2013/03/17 Photoluminescence from C+ ion-implanted and electrochemical etched Si layers 期刊论文  OAI收割 applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427 Shi LW (Shi Liwei); Wang Q (Wang Qiang); Li YG (Li Yuguo); Xue CS (Xue Chengshan); Zhuang HZ (Zhuang Huizhao) 收藏  |  浏览/下载：33/0  |  提交时间：2010/04/11 ion implantation  annealing  chemical etching  photoluminescence  POROUS SILICON  LUMINESCENCE   Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions 期刊论文  OAI收割 thin solid films, 2005, 卷号: 476, 期号: 1, 页码: 68-72 Sun, J; Jin, P; Wang, ZG; Zhang, HZ; Wang, ZY; Hu, LZ 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/17 liquid phase epitaxy (LPE)   High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array 期刊论文  OAI收割 physical review b, 2005, 卷号: 71, 期号: 8, 页码: art.no.085304 Ding, CR; Wang, HZ; Xu, B 收藏  |  浏览/下载：27/0  |  提交时间：2010/03/17 DROPLET FORMATION   Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 期刊论文  OAI收割 micron, 2004, 卷号: 35, 期号: 6, 页码: 475-480 Luo, XH; Wang, RM; Zhang, XP; Zhang, HZ; Yu, DP; Luo, MC 收藏  |  浏览/下载：145/32  |  提交时间：2010/03/09 transmission electron microscopy  electron energy loss spectroscopy  molecular beam epitaxy  gallium nitride  CHEMICAL-VAPOR-DEPOSITION  EPITAXY  LAYER   Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文  OAI收割 international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003 Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC 收藏  |  浏览/下载：18/1  |  提交时间：2010/10/29 transmission electron microscopy  electron energy loss spectroscopy  molecular beam epitaxy  gallium nitride  CHEMICAL-VAPOR-DEPOSITION  EPITAXY  LAYER   Liquid phase epitaxy of Al0.3Ga0.7As islands 期刊论文  OAI收割 journal of crystal growth, 2004, 卷号: 270, 期号: 1-2, 页码: 38-41 Sun, J; Hu, LZ; Sun, YC; Wang, ZY; Zhang, HZ 收藏  |  浏览/下载：423/56  |  提交时间：2010/03/09 crystal morphology   Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 96-103 Xu HZ; Bell A; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 gallium nitride  metalorganic vapor-phase epitaxy  photoluminescence  yellow luminescence  N-TYPE GAN  PERSISTENT PHOTOCONDUCTIVITY  THIN-FILMS  DOPED GAN  DEEP LEVELS  ORIGIN  PHOTOLUMINESCENCE  DEPENDENCE  VACANCIES  EPITAXY   Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 110-117 Xu HZ; Takahashi K; Wang CX; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT 收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12 gallium nitride  metalorganic vapor-phase epitaxy (MOVPE) annealing  crystal quality  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  BUFFER LAYER  PHASE EPITAXY  DEPENDENCE  DEFECTS   Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 218, 期号: 1, 页码: 1-6 Xu HZ; Wang ZG; Kawabe M; Harrison I; Ansell BJ; Foxon CT 收藏  |  浏览/下载：58/0  |  提交时间：2010/08/12 GaN  photoluminescence  optical quenching of photoconductivity  native defect level  molecular beam epitaxy  SINGLE-CRYSTAL GAN  I-N PHOTODIODES  HIGH-SPEED  PHOTOCONDUCTORS  ALXGA1-XN  SIMULATIONS  DETECTORS  SAPPHIRE  LAYERS