中国科学院机构知识库网格系统: 检索

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	Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文 OAI收割 IEEE Photonics Journal, 2017, 卷号: 9, 期号: 2, 页码: 2300108 作者: Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu \| 收藏 \| 浏览/下载：28/0 \| 提交时间：2018/11/30
	Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes 期刊论文 OAI收割 Phys. Status Solidi A, 2017, 卷号: 214, 期号: 10, 页码: 1700320 作者: Yao Xing; De Gang Zhao; De Sheng Jiang; Xiang Li; Feng Liang 收藏 \| 浏览/下载：39/0 \| 提交时间：2018/07/11
	Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination 期刊论文 OAI收割 Journal of Alloys and Compounds, 2017, 卷号: 725, 期号: 2017, 页码: 1130-1135 作者: Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi 收藏 \| 浏览/下载：30/0 \| 提交时间：2018/07/11
	Suppression of optical field leakage to GaN substrate in GaN-based green laser diode 期刊论文 OAI收割 Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 484-489 作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu 收藏 \| 浏览/下载：33/0 \| 提交时间：2018/07/11
	Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact 期刊论文 OAI收割 Applied Optics, 2017, 卷号: 56, 期号: 14, 页码: 4197-4200 作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu 收藏 \| 浏览/下载：16/0 \| 提交时间：2018/07/11
	Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC 期刊论文 OAI收割 Chinese Physics B, 2016, 卷号: 25, 期号: 5, 页码: 057703 Feng Liang; Ping Chen; De-Gang Zhao; De-Sheng Jiang; Zhi-Juan Zhao; Zong-Shun Liu; Jian-Jun Zhu; Jing Yang; Wei Liu; Xiao-Guang He; Xiao-Jing Li; Xiang Li; Shuang-Tao Liu; Hui Yang; Li-Qun Zhang; Jian-Ping Liu; Yuan-Tao Zhang; Guo-Tong Du 收藏 \| 浏览/下载：30/0 \| 提交时间：2017/03/10