机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [7]
• 会议论文 [4]

发表日期

• 2016 [1]
• 2012 [2]
• 2010 [1]
• 2008 [2]
• 2007 [1]
• 2006 [2]
• 更多

学科主题

• 半导体材料 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures 期刊论文  OAI收割 acs nano., 2016, 卷号: 10, 期号: 3, 页码: 3852−3858 Kenan Zhang; Tianning Zhang; Guanghui Cheng; Tianxin Li; Shuxia Wang; Wei Wei; Xiaohao Zhou; Weiwei Yu; Yan Sun; Peng Wang; Dong Zhang; Changgan Zeng; Xingjun Wang; Weida Hu; Hong Jin Fan; Guozhen Shen; Xin Chen; Xiangfeng Duan; Kai Chang; Ning Dai 收藏  |  浏览/下载：43/0  |  提交时间：2017/03/10 Effect of different metal composite layer on field emission properties of diamond film 期刊论文  OAI收割 advanced materials research, 2012, 卷号: 586, 页码: 181-184 Zhang, XinYue; Ma, HuaLi; Zhao, YongMei; Yao, Ning; Zeng, FanGuang 收藏  |  浏览/下载：9/0  |  提交时间：2013/05/07 Comparative studies on field emission properties of diamond and diamond /Ti films 期刊论文  OAI收割 advanced materials research, 2012, 卷号: 586, 页码: 177-180 Zhang, XinYue; Ma, HuaLi; Zhao, YongMei; Yao, Ning; Zeng, FanGuang; Zhang, BingLin 收藏  |  浏览/下载：9/0  |  提交时间：2013/05/07 Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088101 Sun GS (Sun Guo-Sheng); Liu XF (Liu Xing-Fang); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Yang T (Yang Ting); Wu HL (Wu Hai-Lei); Yan GG (Yan Guo-Guo); Zhao YM (Zhao Yong-Mei); Ning J (Ning Jin); Zeng YP (Zeng Yi-Ping); Li JM (Li Jin-Min) 收藏  |  浏览/下载：172/19  |  提交时间：2010/09/07 3C-SiC  heteroepitaxial  multi-wafer  uniformity   Laterally Electrostatically Driven Poly 3C-SiC Folded-Beam Resonant Microstructures 期刊论文  OAI收割 半导体学报, 2008, 卷号: 29, 期号: 8, 页码: 1453-1456 作者:  Wang Liang;  Ning Jin;  Zhao Yongmei;  Liu Xingfang 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/23 High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Ji, G; Sun, GS; Ning, J; Liu, XF; Zhao, YM; Wang, L; Zhao, WS; Zeng, YP 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/09 Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文  OAI收割 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Ning, J (Ning, J.); Zhao, YM (Zhao, Y. M.); Luo, MC (Luo, M. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：88/9  |  提交时间：2010/03/29 AVALANCHE PHOTODIODES  AREA   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文  OAI收割 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：99/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Visible blind p(+)-pi-n(-)-n(+) ultraviolet photodetectors based on 4H-SiC homoepilayers 期刊论文  OAI收割 microelectronics journal, 2006, 卷号: 37, 期号: 11, 页码: 1396-1398 作者:  Ning J;  Liu XF 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/29 4H-SiC   Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs 期刊论文  OAI收割 人工晶体学报, 2005, 卷号: 34, 期号: 6, 页码: 1006-1010 作者:  NING Jin;  LIU Xingfang 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/23