机构

• 半导体研究所 [112]

采集方式

• OAI收割 [97]
• iSwitch采集 [15]

内容类型

• 期刊论文 [112]

发表日期

• 2021 [19]
• 2020 [5]
• 2019 [1]
• 2018 [13]
• 2017 [16]
• 2016 [10]
• 更多

学科主题

• 光电子学 [30]
• 半导体物理 [13]
• 半导体材料 [12]
• 半导体器件 [4]

筛选

浏览/检索结果: 共112条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Enhancing the efficiency of GaN-based laser diodes by the designing of a p-AlGaN cladding layer and an upper waveguide layer 期刊论文  OAI收割 OPTICAL MATERIALS EXPRESS, 2021, 卷号: 11, 期号: 6, 页码: 1780-1790 作者:  Hou, Yufei;   Zhao, Degang;   Liang, Feng;   Liu, Zongshun;   Yang, Jing;   Chen, Ping   |  收藏  |  浏览/下载：6/0  |  提交时间：2022/05/18 New mechanisms of cavity facet degradation for GaN-based laser diodes 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2021, 卷号: 129, 期号: 22, 页码: 223106 作者:  Wang, Xiao-Wei;   Liu, Zong-Shun;   Zhao, De-Gang;   Chen, Ping;   Liang, Feng;   Yang, Jing   |  收藏  |  浏览/下载：4/0  |  提交时间：2022/05/19 E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology 期刊论文  OAI收割 MICROMACHINES, 2021, 卷号: 12, 期号: 6, 页码: 617 作者:  Jia, Li-Fang;   Zhang, Lian;   Xiao, Jin-Ping;   Cheng, Zhe;   Lin, De-Feng;   Ai, Yu-Jie;   Zhao, Jin-Chao;   Zhang, Yun   |  收藏  |  浏览/下载：9/0  |  提交时间：2022/05/18 Monotonic variation in carbon-related defects with Fermi level in different conductive types of GaN 期刊论文  OAI收割 AIP ADVANCES, 2021, 卷号: 11, 期号: 8, 页码: 85321 作者:  Zhang, Yuheng;   Liang, Feng;   Zhao, Degang;   Yang, Jing;   Chen, Ping;   Liu, Zongshun   |  收藏  |  浏览/下载：9/0  |  提交时间：2022/05/09 Modulation of MagR magnetic properties via iron-sulfur cluster binding 期刊论文  OAI收割 SCIENTIFIC REPORTS, 2021, 卷号: 11, 期号: 1, 页码: 23941 作者:  Guo, Zhen;   Xu, Shuai;   Chen, Xue;   Wang, Changhao;   Yang, Peilin;   Qin, Siying;   Zhao, Cuiping;   Fei, Fan;   Zhao, Xianglong;   Tan, Ping-Heng;   Wang, Junfeng;   Xie, Can   |  收藏  |  浏览/下载：61/0  |  提交时间：2022/03/23 Strain-engineering on GeSe: Raman spectroscopy study† 期刊论文  OAI收割 PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2021, 卷号: 23, 期号: 47, 页码: 26997-27004 作者:  Wang, Jin-Jin;   Zhao, Yi-Feng;   Zheng, Jun-Ding;   Wang, Xiao-Ting;   Deng, Xing;   Guan, Zhao;   Ma, Ru-Ru;   Zhong, Ni;   Yue, Fang-Yu;   Wei, Zhong-Ming;   Xiang, Ping-Hua;   Duan, Chun-Gang   |  收藏  |  浏览/下载：11/0  |  提交时间：2022/03/23 Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 874, 页码: 159851 作者:  Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Chen, Ping;   Yang, Jing;   Liu, Zongshun   |  收藏  |  浏览/下载：71/0  |  提交时间：2022/03/28 The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties 期刊论文  OAI收割 NANOSCALE RESEARCH LETTERS, 2021, 卷号: 16, 期号: 1, 页码: 161 作者:  Ben, Yuhao;   Liang, Feng;   Zhao, Degang;   Yang, Jing;   Liu, Zongshun;   Chen, Ping   |  收藏  |  浏览/下载：10/0  |  提交时间：2022/03/24 Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition 期刊论文  OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 10, 页码: 105010 作者:  Zhang, Yuheng;   Yang, Jing;   Zhao, Degang;   Liang, Feng;   Chen, Ping;   Liu, Zongshun   |  收藏  |  浏览/下载：14/0  |  提交时间：2022/03/28 The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2021, 卷号: 570, 页码: 151132 作者:  Wang, Xiao-Wei;   Liang, Feng;   Zhao, De-Gang;   Chen, Ping;   Liu, Zong-Shun;   Yang, Jing   |  收藏  |  浏览/下载：13/0  |  提交时间：2022/03/23