机构

• 半导体研究所 [125]

采集方式

• OAI收割 [125]

内容类型

• 期刊论文 [102]
• 会议论文 [23]

发表日期

• 2011 [3]
• 2010 [11]
• 2009 [3]
• 2008 [14]
• 2007 [11]
• 2006 [17]
• 更多

学科主题

• 光电子学 [125]

筛选

浏览/检索结果: 共125条，第1-10条 帮助 限定条件 存缴方式：oaiharvest    学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.103507 作者:  Wei Y;  Huo YH;  Zhang YH;  Huang JL;  Ma WQ 收藏  |  浏览/下载：67/4  |  提交时间：2011/07/06 MU-M  DETECTOR  TEMPERATURE  GROWTH   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun   |  收藏  |  浏览/下载：19/0  |  提交时间：2012/06/14 Buffer layers  Epitaxial growth  Gallium alloys  Indium antimonides  Molecular beam epitaxy  Molecular beams  Optical waveguides  Optimization  Semiconducting gallium arsenide  Semiconductor quantum wells  Tellurium  Tellurium compounds  Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds   Photon detection and emission of epitaxial Ge on Si with potential applications in microwave photonic filters 期刊论文  OAI收割 2011 ieee international topical meeting on microwave photonics- jointly held with the2011 asia-pacific microwave photonics conference, mwp/apmp2011, 2011 IEEE International Topical Meeting on Microwave Photonics- Jointly Held with the2011 Asia-Pacific Microwave Photonics Conference, MWP/APMP2011, 2011, 2011, 页码: 101-104, 101-104 作者:  Ding, L.;  Lim, Andy Eu-Jin;  Fang, Qing;  Liow, Tsung-Yang;  Yu, M.B.   |  收藏  |  浏览/下载：38/0  |  提交时间：2012/06/14 Detectors  Electroluminescence  Epitaxial growth  Germanium  Light  Light emission  Light sources  Microwave filters  Microwaves  Monolithic integrated circuits  Optical frequency conversion  Photodetectors  Photoluminescence  Photonics  Photons  Semiconducting silicon compounds  Silicon  Detectors  Electroluminescence  Epitaxial Growth  Germanium  Light  Light Emission  Light Sources  Microwave Filters  Microwaves  Monolithic Integrated Circuits  Optical Frequency Conversion  Photodetectors  Photoluminescence  Photonics  Photons  Semiconducting Silicon Compounds  Silicon   Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method 期刊论文  OAI收割 journal of luminescence, 2010, 卷号: 130, 期号: 10, 页码: 1760-1763 Zheng J (Zheng J.); Zuo YH (Zuo Y. H.); Zhang LZ (Zhang L. Z.); Wang W (Wang W.); Xue CL (Xue C. L.); Cheng BW (Cheng B. W.); Yu JZ (Yu J. Z.); Guo HQ (Guo H. Q.); Wang QM (Wang Q. M.) 收藏  |  浏览/下载：105/4  |  提交时间：2010/09/07 Photoluminescence  Energy transfer  Erbium  Bismuth   Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 138-141 作者:  Zhang SM 收藏  |  浏览/下载：58/1  |  提交时间：2011/07/05 BAND-GAP  INDIUM NITRIDE  TRANSPORT  EMISSION   高功率980nm垂直腔面发射激光器的温度特性 期刊论文  OAI收割 红外与激光工程, 2010, 卷号: 39, 期号: 1, 页码: 57-60 作者:  王青;  陈良惠 收藏  |  浏览/下载：8/0  |  提交时间：2011/08/16 Study of GaN epilayers growth on freestanding Si cantilevers 期刊论文  OAI收割 solid-state electronics, 2010, 卷号: 54, 期号: 1, 页码: 4-7 Chen J; Wang X; Wu AM; Zhang B; Wang X; Wu YX; Zhu JJ; Yang H 收藏  |  浏览/下载：73/0  |  提交时间：2010/04/04 FABRICATION  SILICON  MEMS  NITRIDE   The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117801 Hu XL (Hu Xiao-Long); Zhang JY (Zhang Jiang-Yong); Shang JZ (Shang Jing-Zhi); Liu WJ (Liu Wen-Jie); Zhang BP (Zhang Bao-Ping) 收藏  |  浏览/下载：40/0  |  提交时间：2010/12/28 exciton-longitudinal-optical-phonon  InGaN/GaN single quantum well  GaN cap layer  Huang-Rhys factor   Optical properties of light-hole excitons in GaN epilayers 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 11, 页码: article no.116103 Zhang F; Xu SJ; Ning JQ; Zheng CC; Zhao DG; Yang H; Che CM 收藏  |  浏览/下载：46/3  |  提交时间：2011/07/05 TRANSITIONS  ABSORPTION   Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method 期刊论文  OAI收割 journal of luminescence, 2010, 卷号: 130, 期号: 3, 页码: 411-414 作者:  Xue CL 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/05 Erbium silicate  Photoluminescence  Si photonics  WAVE-GUIDE AMPLIFIERS  CRYSTALLINE FILMS  ERBIUM SILICATE  ENERGY-TRANSFER  SI  ER3+  EXCITATION