机构

• 半导体研究所 [30]

采集方式

• OAI收割 [30]

内容类型

• 会议论文 [30]

发表日期

• 2006 [4]
• 2004 [2]
• 2003 [3]
• 2002 [2]
• 2001 [3]
• 2000 [5]
• 更多

学科主题

• 半导体物理 [30]

筛选

浏览/检索结果: 共30条，第1-10条 帮助 限定条件 存缴方式：oaiharvest    学科主题：半导体物理    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Fang, ZD (Fang, Zhidan); Gong, M (Gong, Meng); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：113/32  |  提交时间：2010/03/29 quantum dots  photoluminescence  combination layer  1.3 MU-M  LASERS  INALAS   Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Zeng, YX (Zeng, Yuxin); Liu, W (Liu, Wei); Yang, FH (Yang, Fuhua); Xu, P (Xu, Ping); Tan, PH (Tan, Pingheng); Zheng, HZ (Zheng, Houzhi); Zeng, YP (Zeng, Yiping); Xing, YJ (Xing, Yingjie); Yu, DP (Yu, Dapeng) 收藏  |  浏览/下载：98/31  |  提交时间：2010/03/29 InAs quantum dot  photoluminescence  modulation-doped  field effect transistor  MU-M  CAPPING LAYER   Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文  OAI收割 3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005 Jiang, DS; Qu, YH; Ni, HQ; Wu, DH; Xu, YQ; Niu, ZC 收藏  |  浏览/下载：110/24  |  提交时间：2010/03/29 molecular beam epitaxy   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文  OAI收割 3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004 Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC 收藏  |  浏览/下载：166/29  |  提交时间：2010/03/29 time-resolved photoluminescence   Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文  OAI收割 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 作者:  Zhang YH;  Jiang DS 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 molecular beam epitaxy  quantum wells  GaAsSb/GaAs  GAAS  LASERS  GAIN   Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well 会议论文  OAI收割 asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003 Ying-Qiang X; Zhang W; Niu ZC; Wu RG; Wang QM 收藏  |  浏览/下载：16/1  |  提交时间：2010/10/29 GaNAs  SiO2 encapsulation  rapid-thermal-annealing  nitrogen reorganization  MOLECULAR-BEAM EPITAXY  OPTICAL-PROPERTIES  MU-M   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文  OAI收割 1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003 Leung BH; Fong WK; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29 GaN  low-frequency noise  deep levels  deep level transient Fourier spectroscopy  DEVICES   Resonant tunneling of holes in GaMnAs-related double- barrier structures 会议论文  OAI收割 pasps conference 2002, wurzburg, germany, jul, 2002 Wu HB; Chang K; Xia JB; Peeters FM 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 Zeeman effect  GaMnAs layer  double-barrier structure  APPROXIMATION   Optical study of localized and delocalized states in GaAsN/GaAs 会议论文  OAI收割 symposium on gan and related alloys held at the mrs fall meeting, boston, ma, dec 01-05, 2003 作者:  Tan PH 收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  ALLOYS  GAAS1-XNX  PHOTOLUMINESCENCE  RELAXATION   Optical study on the coupled GaAsSb/GaAs double quantum wells 会议论文  OAI收割 conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002 作者:  Jiang DS;  Zhang Y;  Zhang Y 收藏  |  浏览/下载：9/0  |  提交时间：2010/10/29 LASERS  GAIN  GAAS