中国科学院机构知识库网格系统: 检索

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	Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文 OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: article no.69 作者: Song HP; Wei HY; Li CM; Jiao CM 收藏 \| 浏览/下载：66/4 \| 提交时间：2011/07/05 CATHODOLUMINESCENCE CHARACTERIZATION GALLIUM NITRIDE STRESSES LAYERS HETEROSTRUCTURE DEPOSITION CONSTANTS MECHANISM SAPPHIRE STRAIN
	Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文 OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105 Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG 收藏 \| 浏览/下载：57/2 \| 提交时间：2011/07/05 AlGaN/GaN heterostructures thermal stressing polarization self-consistently solving Schrodinger's and Poisson's equations FIELD-EFFECT TRANSISTORS POLARIZATION STABILITY CHARGE GAN
	Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文 OAI收割 journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032 作者: Pan X 收藏 \| 浏览/下载：20/0 \| 提交时间：2011/09/14 CHEMICAL-VAPOR-DEPOSITION PHASE EPITAXY ALN INTERLAYERS FILMS STRESS LAYERS DISLOCATIONS REDUCTION DENSITY DIODES
	Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文 OAI收割 materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100 Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG 收藏 \| 浏览/下载：26/0 \| 提交时间：2012/01/06 GaN MOCVD Si(111) AlN VAPOR-PHASE EPITAXY LAYERS SUBSTRATE MOCVD STRESS
	Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文 OAI收割 journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467 作者: Pan X 收藏 \| 浏览/下载：81/5 \| 提交时间：2011/07/05 Sandwich structure Stress Aluminum nitride Gallium nitride Silicon PHONON DEFORMATION POTENTIALS WURTZITE ALN SILICON STRESS TRANSISTORS EPITAXY LAYERS