中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
  • 半导体研究所 [15]
采集方式
内容类型
  • 期刊论文 [15]
发表日期
学科主题
  • 光电子学 [15]
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浏览/检索结果: 共15条,第1-10条 帮助

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The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer 期刊论文  OAI收割
J Mater Sci: Mater Electron, 2017, 卷号: 28, 页码: 6008–6014
作者:  
Shuang Cui;  Yuantao Zhang;  Zhen Huang;  Gaoqiang Deng;  Baozhu Li
  |  收藏  |  浏览/下载:10/0  |  提交时间:2018/11/30
Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割
applied physics a, 2016, 卷号: 122, 期号: 9
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:14/0  |  提交时间:2017/03/10
Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC 期刊论文  OAI收割
Chinese Physics B, 2016, 卷号: 25, 期号: 5, 页码: 057703
Feng Liang; Ping Chen; De-Gang Zhao; De-Sheng Jiang; Zhi-Juan Zhao; Zong-Shun Liu; Jian-Jun Zhu; Jing Yang; Wei Liu; Xiao-Guang He; Xiao-Jing Li; Xiang Li; Shuang-Tao Liu; Hui Yang; Li-Qun Zhang; Jian-Ping Liu; Yuan-Tao Zhang; Guo-Tong Du
收藏  |  浏览/下载:30/0  |  提交时间:2017/03/10
Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文  OAI收割
chemical physics letters, 2016, 卷号: 651, 页码: 76-79
F. Liang; P. Chen; D.G. Zhao; D.S. Jiang; Z.S. Liu; J.J. Zhu; J. Yang; W. Liu; X.G. He; X.J. Li; X. Li; S.T. Liu; H. Yang; L.Q. Zhang; J.P. Liu; Y.T. Zhang; G.T. Du
收藏  |  浏览/下载:20/0  |  提交时间:2017/03/10
Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割
materials technology, 2016
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. Li; S. T. Liu; H. Yang; L. Q. Zhang; J. P. Liu; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:22/0  |  提交时间:2017/03/10
Size-dependent electroluminescence from Si quantum dots embedded in amorphous SiC matrix 期刊论文  OAI收割
journal of applied physics, 2011, 卷号: 110, 期号: 6, 页码: 64322
Rui YJ; Li SX; Xu J; Song C; Jiang XF; Li W; Chen KJ; Wang QM; Zuo YH
收藏  |  浏览/下载:20/0  |  提交时间:2012/02/06
Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix 期刊论文  OAI收割
journal of alloys and compounds, 2011, 卷号: 509, 期号: 9, 页码: 3963-3966
Song C; Rui YJ; Wang QB; Xu J; Li W; Chen KJ; Zuo YH; Wang QM
收藏  |  浏览/下载:54/6  |  提交时间:2011/07/05
Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface 期刊论文  OAI收割
journal of applied physics, 2009, 卷号: 106, 期号: 7, 页码: art.no.073522
Wen C; Wang YM; Wan W; L, FH; Liang JW; Zou J
收藏  |  浏览/下载:141/41  |  提交时间:2010/03/08
Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文  OAI收割
applied physics letters, 2008, 卷号: 92, 期号: 19, 页码: art. no. 192107
Fan, HB; Sun, GS; Yang, SY; Zhang, PF; Zhang, RQ; Wei, HY; Jiao, CM; Liu, XL; Chen, YH; Zhu, QS; Wang, ZG
收藏  |  浏览/下载:77/32  |  提交时间:2010/03/08
ZNO FILMS  GROWTH  DIODES  GAN  
Parameters determining crystallinity in beta-SiC thin films prepared by catalytic chemical vapor deposition 期刊论文  OAI收割
journal of crystal growth, 2004, 卷号: 260, 期号: 1-2, 页码: 176-180
Zhao Q; Li JC; Zhou H; Wang H; Wang B; Yan H
收藏  |  浏览/下载:367/118  |  提交时间:2010/03/09