中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [75]
采集方式
OAI收割 [75]
内容类型
期刊论文 [75]
发表日期
2014 [1]
2013 [2]
2012 [2]
2011 [7]
2010 [7]
2009 [1]
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学科主题
光电子学 [75]
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学科主题:光电子学
内容类型:期刊论文
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Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2014, 2014, 卷号: 105, 105, 期号: 23, 页码: 232104, 232104
作者:
Shang, ZJ
;
Zheng, XH
;
Yang, C
;
Chen, Y
;
Li, B
  |  
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2015/03/19
0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP(1-y)buffers
期刊论文
OAI收割
chinese physics b, 2013, 卷号: 22, 期号: 2, 页码: 026802
Ji Lian
;
Lu Shu-Long
;
Jiang De-Sheng
;
Zhao Yong-Ming
;
Tan Ming
;
Zhu Ya-Qi
;
Dong Jian-Rong
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2013/09/22
Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS
期刊论文
OAI收割
ieee transactions on electron devices, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648
Gong, Xiao
;
Han, Genquan
;
Liu, Bin
;
Wang, Lanxiang
;
Wang, Wei
;
Yang, Yue
;
Kong, Eugene Yu-Jin
;
Su, Shaojian
;
Xue, Chunlai)
;
Cheng, Buwen
;
Yeo, Yee-Chia
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2013/08/27
Epitaxy of In0.01Ga0.99As on Ge/offcut Si (001) virtual substrate
期刊论文
OAI收割
thin solid films, 2012, 卷号: 520, 期号: 16, 页码: 5361-5366
Hu, WX
;
Cheng, BW
;
Xue, CL
;
Su, SJ
;
Liu, Z
;
Li, YM
;
Wang, QM
;
Wang, LJ
;
Liu, JQ
;
Ding, J
;
Lin, GJ
;
Lin, ZD
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2013/02/04
Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
期刊论文
OAI收割
journal of crystal growth, 2012, 卷号: 348, 期号: 1, 页码: 25-30
Zhu, JJ
;
Fan, YM
;
Zhang, H
;
Lu, GJ
;
Wang, H
;
Zhao, DG
;
Jiang, DS
;
Liu, ZS
;
Zhang, SM
;
Chen, GF
;
Zhang, BS
;
Yang, H
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/02/27
Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As
期刊论文
OAI收割
ieee international conference on group iv photonics gfp, 2011, 页码: 314-316
Hu, Weixuan
;
Cheng, Buwen
;
Xue, Chunlai
;
Su, Shaojian
;
Liu, Zhi
;
Li, Yaming
;
Wang, Qiming
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2012/06/13
Epitaxial growth
Germanium
Indium
Photonics
Semiconducting silicon compounds
Silicon
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition
期刊论文
OAI收割
journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750
作者:
Yang H
;
Jiang DS
;
Le LC
;
Zhang SM
;
Wu LL
收藏
  |  
浏览/下载:46/3
  |  
提交时间:2011/07/05
Nitride materials
Crystal growth
Composition fluctuations
X-ray diffraction
LAYER
Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers
期刊论文
OAI收割
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.103501
作者:
收藏
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浏览/下载:52/2
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提交时间:2011/07/06
Polarized x-ray spectroscopy of quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) thin films
期刊论文
OAI收割
applied physics letters, 2011, 卷号: 99, 期号: 2, 页码: 22502
Wadley P
;
Casiraghi A
;
Wang M
;
Edmonds KW
;
Campion RP
;
Rushforth AW
;
Gallagher BL
;
Staddon CR
;
Wang KY
;
van der Laan G
;
Arenholz E
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2012/02/06
CIRCULAR-DICHROISM
ABSORPTION
Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507
Yu X
;
Gu YX
;
Wang Q
;
Wei X
;
Chen LH
收藏
  |  
浏览/下载:65/4
  |  
提交时间:2011/07/06
type-II 'W' quantum well
Burt-Foreman Hamiltonian
finite element methods
LASERS
ALLOYS