机构

• 半导体研究所 [98]

采集方式

• OAI收割 [98]

内容类型

• 期刊论文 [98]

发表日期

• 2017 [2]
• 2016 [1]
• 2015 [3]
• 2014 [1]
• 2013 [11]
• 2012 [4]
• 更多

学科主题

• 半导体材料 [98]

筛选

浏览/检索结果: 共98条，第1-10条 帮助 限定条件 学科主题：半导体材料    内容类型：期刊论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO 期刊论文  OAI收割 Chinese Physics B, 2017, 卷号: 26, 期号: 10, 页码: 107101 作者:  Zhan-Wei Shen;  Feng Zhang;  Sima Dimitrijev;  Ji-Sheng Han;  Guo-Guo Yan 收藏  |  浏览/下载：37/0  |  提交时间：2018/06/15 A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition 期刊论文  OAI收割 ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31 作者:  X. F. Liu;  z G. G. Yan;  Z. W. Shen;  Z. X.Wen;  L. X. Tian 收藏  |  浏览/下载：32/0  |  提交时间：2018/06/15 Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition 期刊论文  OAI收割 Chinese Physics B, 2016, 卷号: 25, 期号: 12, 页码: 128104 Li-Xin Tian; Feng Zhang; Zhan-Wei Shen; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng 收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10 Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth 期刊论文  OAI收割 nanomaterials, 2015, 卷号: 5, 期号: 3, 页码: 1532-1543 Xingfang Liu; Yu Chen; Changzheng Sun; Min Guan; Yang Zhang; Feng Zhang; Guosheng Sun; Yiping Zeng 收藏  |  浏览/下载：16/0  |  提交时间：2016/03/29 Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition 期刊论文  OAI收割 materials, 2015, 卷号: 8, 期号: 9, 页码: 5586-5596 Shuxian Cai; Zhonghua Liu; Ni Zhong; Shengbei Liu; Xingfang Liu 收藏  |  浏览/下载：9/0  |  提交时间：2016/03/29 Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates 期刊论文  OAI收割 applied surface science, 2015, 卷号: 353, 页码: 744-749 Guoguo Yan; Feng Zhang; Yingxi Niu; Fei Yang; Xingfang Liu; Lei Wang; Wanshun Zhao; Guosheng Sun; Yiping Zeng 收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29 Strain-assisted structural transformation and band gap tuning in BeO, MgTe, CdS and 2H-SiC: A hybrid density functional study 期刊论文  OAI收割 epl, 2014, 卷号: 106, 期号: 5, 页码: 57001 Shi, LW; Qin, Y; Hu, J; Duan, YF; Qu, LC; Wu, L; Tang, G 收藏  |  浏览/下载：25/0  |  提交时间：2015/04/02 Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC 期刊论文  OAI收割 journal of applied physics, 2013, 卷号: 113, 期号: 4, 页码: 044112 Zhang, Feng; Sun, Guosheng; Zeng, Yiping 收藏  |  浏览/下载：17/0  |  提交时间：2013/09/22 10 × 100 mm 4H-SiC epitaxial growth by warm-wall planetary reactor 期刊论文  OAI收割 materials science forum, 2013, 卷号: 740-742, 页码: 239-242 Lin Dong, Guo Sheng Sun, Jun Yu, Guo Guo Yan, Wan Shun Zhao, Lei Wang, Xin He Zhang, Xi Guang Li, Zhan Guo Wang 收藏  |  浏览/下载：23/0  |  提交时间：2014/05/08 Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers 期刊论文  OAI收割 chinese physics letters, 2013, 卷号: 30, 期号: 9, 页码: 096105 DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei 收藏  |  浏览/下载：21/0  |  提交时间：2014/03/17