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CAS IR Grid
机构
半导体研究所 [36]
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OAI收割 [36]
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期刊论文 [34]
会议论文 [2]
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2011 [3]
2010 [5]
2009 [1]
2008 [2]
2006 [4]
2005 [2]
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半导体材料 [36]
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学科主题:半导体材料
专题:半导体研究所
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Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
期刊论文
OAI收割
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L
;
Zhou, HY
;
Qu, SC
;
Wang, ZG
收藏
  |  
浏览/下载:91/0
  |  
提交时间:2012/02/06
Patterned substrate
Ion implantation
Ordered nanodots
Anodic aluminum oxide
QUANTUM DOTS
ISLANDS
GROWTH
SEMICONDUCTORS
NANOSTRUCTURES
COMPUTATION
INGAAS
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
OAI收割
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
OAI收割
journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 314, 314, 期号: 1, 页码: 141-145, 141-145
作者:
Wei TB
;
Yang JK
;
Hu Q
;
Duan RF
;
Huo ZQ
  |  
收藏
  |  
浏览/下载:80/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
Cl
Pl
Stacking Fault
Hvpe
Gan
Nonpolar
Chemical-vapor-deposition
Acceptor Pair Emission
Phase Epitaxy
Grown Gan
Semiconductors
Sapphire
Films
Nitride
Photoexcited charge current for the presence of pure spin current
期刊论文
OAI收割
applied physics letters, 2010, 卷号: 96, 期号: 26, 页码: art. no. 262108
Liu Y (Liu Yu)
;
Chen YH (Chen Yonghai)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:221/46
  |  
提交时间:2010/09/07
ELECTRONIC MEASUREMENT
SEMICONDUCTORS
TRANSPORT
The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy
期刊论文
OAI收割
solid state communications, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994
Song HP (Song H. P.)
;
Zheng GL (Zheng G. L.)
;
Yang AL (Yang A. L.)
;
Guo Y (Guo Y.)
;
Wei HY (Wei H. Y.)
;
Li CM (Li C. M.)
;
Yang SY (Yang S. Y.)
;
Liu XL (Liu X. L.)
;
Zhu QS (Zhu Q. S.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/27
ZnO
In2O3
MOCVD
Photoelectron spectroscopies
IN2O3-ZNO FILMS
TRANSPARENT
OXIDE
SEMICONDUCTORS
INN
Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods
期刊论文
OAI收割
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
Li ZW
;
Xu XQ
;
Wang J
;
Liu JM
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:67/8
  |  
提交时间:2011/07/05
IONIZED-IMPURITY-SCATTERING
COMPOSITIONAL INHOMOGENEITY
PHASE-SEPARATION
QUANTUM-WELLS
ALLOY
CATHODOLUMINESCENCE
HETEROSTRUCTURES
SEMICONDUCTORS
TRANSPORT
MOBILITY
IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES
期刊论文
OAI收割
international journal of modern physics b, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450
作者:
Hao GD
收藏
  |  
浏览/下载:49/5
  |  
提交时间:2011/07/05
Strain effect
optical anisotropy
A-plane
R-plane
CONTINUOUS-WAVE OPERATION
LIGHT-EMITTING-DIODES
LASER-DIODES
POLARIZATION ANISOTROPY
QUANTUM-WELLS
SEMICONDUCTORS
Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films
期刊论文
OAI收割
physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 81, 81, 期号: 23, 页码: art. no. 235201, Art. No. 235201
作者:
Khazen K (Khazen Kh.)
;
von Bardeleben HJ (von Bardeleben H. J.)
;
Cantin JL (Cantin J. L.)
;
Mauger A (Mauger A.)
;
Chen L (Chen L.)
  |  
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/06/18
AMORPHOUS FERROMAGNET
Amorphous Ferromagnet
Curie-temperature
Critical-behavior
Renormalization Group
Dipolar Interactions
Critical Exponents
Magnetic Equation
Alloys
State
Semiconductors
CURIE-TEMPERATURE
CRITICAL-BEHAVIOR
RENORMALIZATION GROUP
DIPOLAR INTERACTIONS
CRITICAL EXPONENTS
MAGNETIC EQUATION
ALLOYS
STATE
SEMICONDUCTORS
Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation
期刊论文
OAI收割
japanese journal of applied physics, 2009, 卷号: 48, 期号: 2, 页码: art. no. 021001
作者:
Wei XC
;
Duan RF
;
Ding K
收藏
  |  
浏览/下载:76/19
  |  
提交时间:2010/03/08
LOCALIZATION
SEMICONDUCTORS
EMISSION
BOXES
BAND
Anisotropic exchange splitting of excitons in (001)GaAs/Al0.3Ga0.7As superlattice studied by reflectance difference spectroscopy
期刊论文
OAI收割
journal of applied physics, 2008, 卷号: 104, 期号: 1, 页码: art. no. 013106
Zhou, ZY
;
Tang, CG
;
Chen, YH
;
Wang, ZG
收藏
  |  
浏览/下载:64/0
  |  
提交时间:2010/03/08
FINE-STRUCTURE
QUANTUM-WELLS
GAAS/ALAS SUPERLATTICES
SEMICONDUCTORS
TEMPERATURE
HOLE