机构

• 半导体研究所 [26]

采集方式

• OAI收割 [26]

内容类型

• 会议论文 [26]

发表日期

• 2011 [2]
• 2010 [1]
• 2009 [1]
• 2008 [5]
• 2007 [2]
• 2006 [3]
• 更多

学科主题

• 半导体材料 [15]
• 光电子学 [8]
• 半导体物理 [2]
• 半导体化学 [1]

筛选

浏览/检索结果: 共26条，第1-10条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 会议论文  OAI收割 16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010 Pan X (Pan Xu); Wei M (Wei Meng); Yang CB (Yang Cuibai); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang) 收藏  |  浏览/下载：15/0  |  提交时间：2011/07/26 Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文  OAI收割 3rd international photonics and optoelectronics meetings, wuhan, peoples r china, nov 02-05, 2010 Wei M (Wei Meng); Wang XL (Wang Xiaoliang); Pan X (Pan Xu); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Zhang ML (Zhang Minglan); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：15/0  |  提交时间：2011/07/26 Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers 会议论文  OAI收割 6th international conference on nanoscience and technology, beijing, peoples r china, jun 04-06, 2007 Wu, BP; Wu, DH; Xiong, YH; Huang, SS; Ni, HQ; Xu, YQ; Niu, ZC 收藏  |  浏览/下载：50/0  |  提交时间：2010/03/09 InAs Quantum Dots   Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文  OAI收割 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Li, JM; Zeng, YP 收藏  |  浏览/下载：54/0  |  提交时间：2010/03/09 Silicon Carbide  Aluminum Nitride  buffer layer  LPCVD   AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Liu, NX; Yan, JC; Liu, Z; Ma, P; Wang, JX; Li, JM 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 AlGaN  HT-AlGaN buffer  HT-interlayers  ultraviolet (UV) LED   AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Hou QF;  Zhang ML 收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09 ALGAN/GAN HEMTS   Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer 会议论文  OAI收割 5th ieee international conference on group iv photonics, sorrento, italy, sep 17-19, 2008 作者:  Xue CL 收藏  |  浏览/下载：52/0  |  提交时间：2010/03/09 SIGE/SI(100) EPITAXIAL-FILMS   The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Wei, TB; Duan, RF; Wang, JX; Li, JM; Huo, ZQ; Zeng, YP 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 HVPE  GaN  nitridation  polarity  etching   High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文  OAI收割 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：125/38  |  提交时间：2010/03/29 BUFFER LAYER  STRESS  PHOTODIODES  REDUCTION  DETECTORS  SAPPHIRE  EPITAXY  GROWTH