机构

• 半导体研究所 [19]

采集方式

• OAI收割 [19]

内容类型

• 期刊论文 [19]

发表日期

• 2010 [19]

学科主题

• 光电子学 [16]
• 半导体材料 [2]
• 微电子学 [1]

筛选

浏览/检索结果: 共19条，第1-10条 帮助 限定条件 发表日期：2010    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate 期刊论文  OAI收割 ieee electron device letters, 2010, 卷号: 31, 期号: 10, 页码: 1101-1103 Yang ZC (Yang Z. C.); Huang AP (Huang A. P.); Zheng XH (Zheng X. H.); Xiao ZS (Xiao Z. S.); Liu XY (Liu X. Y.); Zhang XW (Zhang X. W.); Chu PK (Chu Paul K.); Wang WW (Wang W. W.) 收藏  |  浏览/下载：62/0  |  提交时间：2010/11/14 Electron state density  Fermi-level pinning (FLP)  MIS structures  work function (WF)  WORK FUNCTION   Time delay in InGaN multiple quantum well laser diodes at room temperature 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 12, 页码: article no.124211 作者:  Wang H;  Yang H;  Yang H;  Jiang DS;  Zhao DG 收藏  |  浏览/下载：41/2  |  提交时间：2011/07/05 InGaN  laser diode  delay effect  saturable absorber  traps  LIGHT EMISSION   Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804 Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载：110/2  |  提交时间：2010/04/22 metalorganic chemical vapor deposition  Al1-xInxN  gradual variation in composition  optical reflectance spectra  X-RAY-DIFFRACTION  PHASE EPITAXY  RELAXATION  FILMS  HETEROSTRUCTURES  SEPARATION  DYNAMICS  ALLOYS  REGION  LAYERS   Abnormal photoabsorption in high resistance GaN epilayer 期刊论文  OAI收割 acta physica sinica, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051 Liu WB (Liu Wen-Bao); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhu JJ (Zhu Jian-Jun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载：28/0  |  提交时间：2010/12/27 GaN  exciton  photovoltaic spectroscopy  MSM  photoresponsivity   Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |  浏览/下载：127/4  |  提交时间：2010/04/13 GaN  Si (111) substrate  metalorganic chemical vapour deposition  AlN buffer layer  AlGaN interlayer  : VAPOR-PHASE EPITAXY  CRACK-FREE GAN  STRESS-CONTROL  SI(111)  DEPOSITION  ALXGA1-XN  FILM   Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802 Guo X (Guo Xi); Wang H (Wang Hui); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载：28/0  |  提交时间：2010/11/02 InGaN  In-plane grazing incidence x-ray diffraction  reciprocal space mapping  biaxial strain  CRITICAL LAYER THICKNESS  OPTICAL-PROPERTIES  LATTICE-CONSTANTS  GAN  HETEROSTRUCTURES  ALLOYS  WELLS   Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文  OAI收割 : journal of alloys and compounds, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302 作者:  Zhu JJ;  Yang H;  Yang H;  Zhao DG;  Zhang SM 收藏  |  浏览/下载：231/10  |  提交时间：2010/04/13 Nitride materials  Photoconductivity and photovoltaics  Computer simulations  FILMS   Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106106 Tang HM (Tang Hai-Ma); Zheng ZS (Zheng Zhong-Shan); Zhang EX (Zhang En-Xia); Yu F (Yu Fang); Li N (Li Ning); Wang NJ (Wang Ning-Juan) 收藏  |  浏览/下载：48/0  |  提交时间：2010/11/02 silicon-on-insulator wafers  radiation hardness  nitrogen implantation   Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908 Zheng XH (Zheng X. H.); Huang AP (Huang A. P.); Xiao ZS (Xiao Z. S.); Yang ZC (Yang Z. C.); Wang M (Wang M.); Zhang XW (Zhang X. W.); Wang WW (Wang W. W.); Chu PK (Chu Paul K.) 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/14 OXYGEN  GATE  DIFFUSION  FILMS   Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307 作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ 收藏  |  浏览/下载：107/3  |  提交时间：2010/04/05 GaN  light emitting diode  surface treatment  leakage current  THREADING DISLOCATION DENSITIES  LAYERS  NI/AU  LEDS