机构

• 半导体研究所 [9]

采集方式

• OAI收割 [9]

内容类型

• 期刊论文 [9]

发表日期

• 2016 [1]
• 2015 [1]
• 2014 [2]
• 2012 [2]
• 2011 [2]
• 2004 [1]
• 更多

学科主题

• 光电子学 [9]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：光电子学    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Growth parametric study of N-polar InGaN films by metalorganic chemical vapor deposition 期刊论文  OAI收割 superlattices and microstructures, 2016, 卷号: 91, 页码: 259-268 Fan Yang; Yuan-tao Zhang; Xu Han; Peng-chong Li; Jun-yan Jiang; Zhen Huang; Jing-zhi Yin; De-gang Zhao; Bao-lin Zhang; Guo-tong Du 收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10 Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition 期刊论文  OAI收割 vacuum, 2015, 卷号: 119, 期号: 2015, 页码: 63e67 Junyan Jiang; Yuantao Zhang; Fan Yang; Zhen Huang; Long Yan; Pengchong Li; Chen Chi; Degang Zhao; Baolin Zhang; Guotong Du 收藏  |  浏览/下载：13/0  |  提交时间：2016/03/23 Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate 期刊论文  OAI收割 semiconductor science and technology, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 2014, 卷号: 29, 29, 期号: 11, 页码: 115027, 115027 作者:  Liu, Yan;  Yan, Jing;  Liu, Mingshan;  Wang, Hongjuan;  Zhang, Qingfang   |  收藏  |  浏览/下载：19/0  |  提交时间：2015/03/19 Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ 期刊论文  OAI收割 ieee transactions on electron devices, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 2014, 卷号: 61, 61, 期号: 11, 页码: 3639-3645, 3639-3645 作者:  Liu, Yan;  Yan, Jing;  Wang, Hongjuan;  Zhang,Qingfang;  Liu, Mingshan   |  收藏  |  浏览/下载：25/0  |  提交时间：2015/03/20 Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact 期刊论文  OAI收割 acta physica sinica, 2012, 卷号: 61, 期号: 21, 页码: 217302 Wang Xiao-Yong; Chong Ming; Zhao De-Gang; Su Yan-Mei 收藏  |  浏览/下载：16/0  |  提交时间：2013/10/10 Femtosecond laser lithography technique for submicron T-gate fabrication on positive photoresist 期刊论文  OAI收割 optical engineering, 2012, 卷号: 51, 期号: 5, 页码: 54303 Du, YD; Han, WH; Yan, W; Xu, XN; Zhang, YB; Wang, XD; Yang, FH; Cao, HZ; Jin, F; Dong, XZ; Zhao, ZS; Duan, XM; Liu, Y 收藏  |  浏览/下载：11/0  |  提交时间：2013/03/17 Improved performance of UV-LED by p-AlGaN with graded composition 期刊论文  OAI收割 physica status solidi(c) current topics in solid state physics, Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 2011, 卷号: 8, 8, 期号: 2, 页码: 461-463, 461-463 作者:  Yan, Jianchang   |  收藏  |  浏览/下载：44/0  |  提交时间：2012/06/14 Atomic force microscopy  Diffraction  Electroluminescence  Gallium  Metallorganic chemical vapor deposition  Organic chemicals  Organic light emitting diodes(OLED)  Organometallics  Structure(composition)  Ultraviolet radiation  X ray diffraction  Atomic Force Microscopy  Diffraction  Electroluminescence  Gallium  Metallorganic Chemical Vapor Deposition  Organic Chemicals  Organic Light Emitting Diodes(Oled)  Organometallics  Structure(Composition)  Ultraviolet Radiation  x Ray Diffraction   Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 1, 页码: 32-35, 32-35 作者:  Yan, Tingjing;  Chong, Ming;  Zhao, Degang;  Zhang, Shuang;  Chen, Lianghui   |  收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14 Alloying  Fabrication  Gallium  Heterojunctions  Optoelectronic devices  Pixels  Alloying  Fabrication  Gallium  Heterojunctions  Optoelectronic Devices  Pixels   Parameters determining crystallinity in beta-SiC thin films prepared by catalytic chemical vapor deposition 期刊论文  OAI收割 journal of crystal growth, 2004, 卷号: 260, 期号: 1-2, 页码: 176-180 Zhao Q; Li JC; Zhou H; Wang H; Wang B; Yan H 收藏  |  浏览/下载：367/118  |  提交时间：2010/03/09 catalytic chemical vapor deposition