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浏览/检索结果: 共86条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure 期刊论文  OAI收割 THIN SOLID FILMS, 2022, 卷号: 762 作者:  Cheng, Wangping;  Li, Chenhui;  Zhou, Chen;  He, Yuandi;  Wei, Renhuai   |  收藏  |  浏览/下载：31/0  |  提交时间：2022/12/23 Resistive random access memory  Resistive switching  Self-rectifying behavior  Copper chromium oxide  Thin film  Solution deposition   Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction 期刊论文  OAI收割 NANOSCALE ADVANCES, 2022, 页码: 8 作者:  Zang, Chao;  Li, Bo;  Sun, Yun;  Feng, Shun;  Wang, Xin-Zhe   |  收藏  |  浏览/下载：10/0  |  提交时间：2023/05/09 Understanding and modulation of resistive switching behaviors in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3/Nb:SrTiO3 multilayer junctions 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2022, 卷号: 574, 页码: 11 作者:  Zheng, Hang Yu;  Bai, Yu;  Shao, Yan;  Yu, Hai Yi;  Chen, Bing   |  收藏  |  浏览/下载：21/0  |  提交时间：2022/07/01 Ferroelectric multilayer junction  Resistive switching  Ferroelectric field effect  Depletion layer width   Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory 期刊论文  OAI收割 ADVANCED ELECTRONIC MATERIALS, 2021, 页码: 10 作者:  Huang, Biaohong;  Xie, Zhongshuai;  Feng, Dingshuai;  Li, Lingli;  Li, Xiaoqi   |  收藏  |  浏览/下载：28/0  |  提交时间：2022/07/01 BiFeO3  current jump  domain wall creep  ferroelectric resistive switching  oxygen vacancy  space-charge-limited current   Single-Dislocation Schottky Diodes 期刊论文  OAI收割 NANO LETTERS, 2021, 卷号: 21, 期号: 13, 页码: 5586-5592 作者:  Tao, Ang;  Yao, Tingting;  Jiang, Yixiao;  Yang, Lixin;  Yan, Xuexi   |  收藏  |  浏览/下载：28/0  |  提交时间：2021/10/15 dislocation  Schottky diode  conductive atomic force microscopy  transmission electron microscopy  first-principles calculations   High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient 期刊论文  OAI收割 NANOSCALE, 2021, 卷号: 13, 期号: 4, 页码: 2448-2455 作者:  Aziz, Tariq;  Wei, Shijing;  Sun, Yun;  Ma, Lai-Peng;  Pei, Songfeng   |  收藏  |  浏览/下载：24/0  |  提交时间：2021/03/15 Stretchable and Twistable Resistive Switching Memory with Information Storage and Computing Functionalities 期刊论文  OAI收割 ADVANCED MATERIALS TECHNOLOGIES, 2021, 卷号: 6, 期号: 1 作者:  Lu, Ying;  Gao, Shuang;  Li, Fali;  Zhou, Youlin;  Xie, Zhuolin   |  收藏  |  浏览/下载：9/0  |  提交时间：2021/12/01 ELECTRONICS  SKIN   Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device 期刊论文  OAI收割 NANOMATERIALS, 2021, 卷号: 11, 期号: 6 作者:  Lv, Fengzhen;  Zhong, Tingting;  Qin, Yongfu;  Qin, Haijun;  Wang, Wenfeng   |  收藏  |  浏览/下载：16/0  |  提交时间：2021/12/01 NEGATIVE DIFFERENTIAL RESISTANCE  DOUBLE PEROVSKITE  MEMRISTIVE DEVICES  THIN-FILMS   Effects of high energy heavy ion irradiation on resistive switches 期刊论文  OAI收割 MICROELECTRONIC ENGINEERING, 2020, 卷号: 231, 页码: 6 作者:  Guo, Xiangyu;  Liu, Jiande;  Wang, Qi;  He, Deyan   |  收藏  |  浏览/下载：12/0  |  提交时间：2021/12/15 Resistive switching  High energy heavy ion  Concentrated defects  Switching behavior   Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands 期刊论文  OAI收割 ACTA MATERIALIA, 2020, 卷号: 187, 页码: 12-18 作者:  Han, M. J.;  Tang, Y. L.;  Wang, Y. J.;  Zhu, Y. L.;  Ma, J. Y.   |  收藏  |  浏览/下载：9/0  |  提交时间：2021/02/02 Resistive switching behavior  Charged domain walls  Conductive filament mode  Transmission electron microscopy  Piezoresponse force microscopy