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CAS IR Grid
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宁波材料技术与工程研... [9]
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期刊论文 [19]
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2022 [2]
2021 [2]
2020 [2]
2019 [5]
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Chemistry [1]
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A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory
期刊论文
OAI收割
ADVANCED MATERIALS, 2022, 页码: 10
作者:
Li, Wanying
;
Guo, Yimeng
;
Luo, Zhaoping
;
Wu, Shuhao
;
Han, Bo
  |  
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2023/05/09
2D ferroelectrics
array
memristive device
multi-bit storage
van der waals heterostructures
A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction
期刊论文
OAI收割
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2022, 卷号: 128, 页码: 239-244
作者:
Wang, Yaning
;
Li, Wanying
;
Guo, Yimeng
;
Huang, Xin
;
Luo, Zhaoping
  |  
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2022/07/14
van der Waals heterostructures
Ferroelectrics
Memristor
Artificial synapse
Neuromorphic computing
Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device
期刊论文
OAI收割
NANOMATERIALS, 2021, 卷号: 11, 期号: 6
作者:
Lv, Fengzhen
;
Zhong, Tingting
;
Qin, Yongfu
;
Qin, Haijun
;
Wang, Wenfeng
  |  
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2021/12/01
NEGATIVE DIFFERENTIAL RESISTANCE
DOUBLE PEROVSKITE
MEMRISTIVE DEVICES
THIN-FILMS
Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence
期刊论文
OAI收割
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2021, 卷号: 22, 期号: 1, 页码: 326-344
作者:
Wang, Jingrui
;
Xia, Zhuge
;
Fei, Zhuge
  |  
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2021/12/01
RESISTIVE SWITCHING CHARACTERISTICS
ELECTRONIC SYNAPSE
HIGHLY UNIFORM
HIGH ENDURANCE
LOW-POWER
MEMRISTOR
MEMORY
RRAM
CLASSIFICATION
PLASTICITY
Electroresistance effect in oxygen-deficient La(0.8)Ba(0.2)MnO(3-delta)thin films
期刊论文
OAI收割
JOURNAL OF PHYSICS-CONDENSED MATTER, 2020, 卷号: 32
作者:
Lin, Guankai
  |  
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2020/10/26
manganite
thin film
electroresistance
oxygen deficiency
grain boundary
Training and Operation of Multi-layer Convolutional Neural Network Using Electronic Synapses
期刊论文
OAI收割
Journal of Physics: Conference Series, 2020, 卷号: 1631, 期号: 1
作者:
Ding,Yi
;
Li,Penglong
;
Liu,Jiaqi
;
Luo,Ding
;
Li,Xiaolong
  |  
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2021/02/24
Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric
期刊论文
OAI收割
ADVANCED MATERIALS, 2019, 卷号: 31, 期号: 29, 页码: 9
作者:
Xue, Fei
;
He, Xin
;
Retamal, Jose Ramon Duran
;
Han, Ali
;
Zhang, Junwei
  |  
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2021/02/02
ferroelectrics
gate tunability
memristors
multidirectional programming
Memristive Synapses for Brain-Inspired Computing
期刊论文
OAI收割
ADVANCED MATERIALS TECHNOLOGIES, 2019, 卷号: 4, 期号: 3
作者:
Wang, Jingrui
;
Zhuge, Fei
  |  
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2019/12/18
RESISTIVE-SWITCHING MEMORY
MAGNETIC TUNNEL-JUNCTIONS
LONG-TERM POTENTIATION
PHASE-CHANGE MEMORY
RRAM DEVICES
SYNAPTIC PLASTICITY
CONDUCTANCE LINEARITY
ELECTRONIC SYNAPSES
IMPLEMENTATION
SYSTEM
Organic and hybrid resistive switching materials and devices
期刊论文
OAI收割
CHEMICAL SOCIETY REVIEWS, 2019, 卷号: 48, 期号: 6, 页码: 1531-1565
作者:
Gao, Shuang
;
Yi, Xiaohui
;
Shang, Jie
;
Liu, Gang
;
Li, Run-Wei
  |  
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2019/12/18
NEGATIVE DIFFERENTIAL RESISTANCE
FLEXIBLE NONVOLATILE MEMORY
SINGLE-ATOM SUBSTITUTION
GRAPHENE QUANTUM DOTS
THIN-FILMS
CONJUGATED-POLYMER
MEMRISTIVE DEVICES
HALIDE PEROVSKITES
CARBON NANOTUBES
FACILE SYNTHESIS
Recommended Methods to Study Resistive Switching Devices
期刊论文
OAI收割
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 1
作者:
Lanza, Mario
;
Wong, H-S Philip
;
Pop, Eric
;
Ielmini, Daniele
;
Strukov, Dimitri
  |  
收藏
  |  
浏览/下载:95/0
  |  
提交时间:2019/12/18
HEXAGONAL BORON-NITRIDE
ALIGNED CARBON NANOTUBES
SPICE COMPACT MODEL
NONVOLATILE MEMORY
RRAM DEVICES
THIN-FILM
DIELECTRIC-BREAKDOWN
MEMRISTIVE BEHAVIOR
PHYSICAL MODEL
NANOSCALE