机构

• 西安光学精密机械研... [22]
• 半导体研究所 [16]
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• 高能物理研究所 [2]
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• OAI收割 [40]
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• 期刊论文 [26]
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• 2022 [4]
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• 2020 [1]
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学科主题

• 半导体材料 [4]
• 半导体器件 [2]
• 半导体物理 [2]

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浏览/检索结果: 共45条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2022, 页码: 8 作者:  Hao, Xiaodong;  Zhang, Xishuo;  Sun, Benyao;  Yin, Deqiang;  Dong, Hailiang   |  收藏  |  浏览/下载：15/0  |  提交时间：2023/05/09 polarization charge effect  built-in electric field  p-n junction  semipolar InGaN  GaN interface  first principles calculation   The Differences in Spatial Luminescence Characteristics between Blue and Green Quantum Wells in Monolithic Semipolar (20-21) LEDs Using SNOM 期刊论文  OAI收割 NANOMATERIALS, 2022, 卷号: 12, 期号: 19 作者:  Li, Aixing;  Li, Yufeng;  Song, Jie;  Yang, Haifeng;  Zhang, Ye   |  收藏  |  浏览/下载：34/0  |  提交时间：2022/10/28 semipolar LEDs  localization states  scanning near-field optical microscopy   Anisotropic Strain Relaxation in Semipolar (11(2)over-bar2) InGaN/GaN Superlattice Relaxed Templates 期刊论文  OAI收割 NANOMATERIALS, 2022, 卷号: 12, 期号: 17, 页码: 3007 作者:  Li, Wenlong;  Wang, Lianshan;  Chai, Ruohao;  Wen, Ling;  Wang, Zhen   |  收藏  |  浏览/下载：5/0  |  提交时间：2023/11/10 The influence of high-temperature nitridation process on the crystalline quality of semipolar (11(2)over-bar2) GaN epitaxial films 期刊论文  OAI收割 CURRENT APPLIED PHYSICS, 2022, 卷号: 39, 页码: 38-44 作者:  Li, WL;  Wang, LS;  Chai, RH;  Wen, L;  Lu, HX   |  收藏  |  浏览/下载：5/0  |  提交时间：2023/11/10 Wafer-Scale Semipolar Micro-Pyramid Lighting-Emitting Diode Array 期刊论文  OAI收割 CRYSTALS, 2021, 卷号: 11, 期号: 6, 页码: 686 作者:  Zhang, Shuo;   Yan, Yan;   Feng, Tao;   Yin, Yue;   Ren, Fang;   Liang, Meng;   Wu, Chaoxing;   Yi, Xiaoyan;   Wang, Junxi;   Li, Jinmin;   Liu, Zhiqiang   |  收藏  |  浏览/下载：12/0  |  提交时间：2022/07/15 Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth 期刊论文  OAI收割 CRYSTAL GROWTH & DESIGN, 2021, 卷号: 21, 期号: 5, 页码: 2911-2919 作者:  Chen, Li;  Lin, Wei;  Chen, Hangyang;  Xu, Houqiang;  Guo, Chenyu   |  收藏  |  浏览/下载：27/0  |  提交时间：2021/12/01 SAPPHIRE  GROWTH  SUPERLATTICES  QUALITY  ALGAN  AIN   Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth 期刊论文  OAI收割 CRYSTAL GROWTH & DESIGN, 2021, 卷号: 21, 期号: 5, 页码: 2911-2919 作者:  Chen, Li;   Lin, Wei;   Chen, Hangyang;   Xu, Houqiang;   Guo, Chenyu;   Liu, Zhibin;   Yan, Jianchang;   Sun, Jie;   Liu, Huan;   Wu, Jason;   Guo, Wei;   Kang, Junyong;   Ye, Jichun   |  收藏  |  浏览/下载：16/0  |  提交时间：2022/07/26 Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer 期刊论文  OAI收割 Journal of Crystal Growth, 2020, 卷号: 536 作者:  Song, Jie;  Choi, Joowon;  Han, Jung   |  收藏  |  浏览/下载：38/0  |  提交时间：2020/03/12 Gallium nitride  Dislocations  Metalorganic chemical vapor deposition  Superlattice  Light emitting diodes   An apparatus comprising a waveguide-modulator and laser-diode and a method of manufacture thereof 专利  OAI收割 专利号: EP3360210A1, 申请日期: 2018-08-15, 公开日期: 2018-08-15 作者:  OOI, BOON SIEW;  SHEN, CHAO;  NG, TIEN KHEE;  ALYAMANI, AHMED;  ELDESOUKI, MUNIR   |  收藏  |  浏览/下载：95/0  |  提交时间：2020/01/18 Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文  OAI收割 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450 作者:  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo   |  收藏  |  浏览/下载：28/0  |  提交时间：2019/11/15