机构

• 半导体研究所 [55]
• 高能物理研究所 [2]
• 生物物理研究所 [1]
• 地理科学与资源研究所 [1]

采集方式

• OAI收割 [40]
• iSwitch采集 [19]

内容类型

• 期刊论文 [59]

发表日期

• 2022 [2]
• 2021 [2]
• 2020 [1]
• 2019 [1]
• 2018 [5]
• 2017 [4]
• 更多

学科主题

• 半导体材料 [27]
• Neuroscien... [1]

筛选

浏览/检索结果: 共59条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 The contribution of understory and Compositae species to canopy storage capacity of semiarid grassland communities on the Loess Plateau 期刊论文  OAI收割 ECOHYDROLOGY, 2022, 页码: 14 作者:  Luo, Yang;  Zhou, Junjie;  Jian, Chunxia;  Chen, Yang;  Wang, Shaoyan   |  收藏  |  浏览/下载：33/0  |  提交时间：2022/11/09 community vertical structure  interception process  leaf area index  species family  storage capacity   Anisotropic Strain Relaxation in Semipolar (11(2)over-bar2) InGaN/GaN Superlattice Relaxed Templates 期刊论文  OAI收割 NANOMATERIALS, 2022, 卷号: 12, 期号: 17, 页码: 3007 作者:  Li, Wenlong;  Wang, Lianshan;  Chai, Ruohao;  Wen, Ling;  Wang, Zhen   |  收藏  |  浏览/下载：8/0  |  提交时间：2023/11/10 Wet etching of semi-polar (11-22) GaN on m-sapphire by different methods 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2021, 卷号: 570, 页码: 126200 作者:  Wen, Ling;   Wang, Lianshan;   Chai, Ruohao;   Li, Wenlong;   Yang, Shaoyan   |  收藏  |  浏览/下载：19/0  |  提交时间：2022/05/19 Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes 期刊论文  OAI收割 CRYSTENGCOMM, 2021, 卷号: 23, 期号: 12, 页码: 2360–2366 作者:  Yao, Weizhen;   Wang, Lianshan;   Meng, Yulin;   Yang, Shaoyan;   Liu, Xianglin;   Niu, Huidan;   Wang, Zhanguo   |  收藏  |  浏览/下载：23/0  |  提交时间：2022/09/29 Analysis of growth rate and crystal quality of AlN epilayers by flow-modulated metal organic chemical vapor deposition 期刊论文  OAI收割 SUPERLATTICES AND MICROSTRUCTURES, 2020, 卷号: 137, 页码: 106336 作者:  Fangzheng Li;   Lianshan Wang ;   Weizhen Yao ;   Yulin Meng ;  Shaoyan Yang;   Zhanguo Wang   |  收藏  |  浏览/下载：17/0  |  提交时间：2021/12/16 Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors 期刊论文  OAI收割 Semiconductor Science and Technology, 2019, 卷号: 34, 期号: 12, 页码: 125006 作者:  Weizhen Yao;  Lianshan Wang;  Fangzheng Li;  Yulin Meng;  Shaoyan Yang ;   Zhanguo Wang   |  收藏  |  浏览/下载：30/0  |  提交时间：2020/07/30 Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文  OAI收割 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450 作者:  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo   |  收藏  |  浏览/下载：31/0  |  提交时间：2019/11/15 Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文  OAI收割 Applied Physics A, 2018, 卷号: 124, 期号: 2, 页码: 130 作者:  Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Fangzheng Li;  Hongyuan Wei;  Shaoyan Yang;  Zhanguo Wang   |  收藏  |  浏览/下载：31/0  |  提交时间：2019/11/15 Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters 期刊论文  OAI收割 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 23, 页码: 1800455 作者:  Meng Yulin;  Wang Lianshan;  Zhao Guijuan;  Li Fangzheng;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo   |  收藏  |  浏览/下载：34/0  |  提交时间：2019/11/15 Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 5, 页码: 052105 作者:  Guijuan Zhao;   Lianshan Wang;   Huijie Li;   Yulin Meng;   Fangzheng Li;   Shaoyan Yang;   Zhanguo Wang   |  收藏  |  浏览/下载：34/0  |  提交时间：2019/11/15