中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共35条,第1-10条 帮助

条数/页: 排序方式:
J/psi production as a function of charged-particle multiplicity in p-Pb collisions at root s(NN)=8.16 TeV 期刊论文  OAI收割
JOURNAL OF HIGH ENERGY PHYSICS, 2020, 期号: 9, 页码: -
作者:  
Acharya, S;  Adamova D;  Adler, A;  Adolfsson, J;  Aggarwal, MM
  |  收藏  |  浏览/下载:74/0  |  提交时间:2021/09/06
Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection 期刊论文  OAI收割
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 8, 页码: 87304
作者:  
Liang XH(梁晓华);  Cui XZ(崔兴柱);  Liang, XH;  Xia, XC;  Ye, X
  |  收藏  |  浏览/下载:23/0  |  提交时间:2019/09/24
Re-characterization of hammerhead ribozymes as molecular tools for intermolecular RNA cleavage 期刊论文  OAI收割
ORGANIC & BIOMOLECULAR CHEMISTRY, 2017, 卷号: 15, 期号: 21, 页码: 4681-4685
作者:  
Huang, X;  Cui, X;  Dong, J;  Du, F;  Zhao, YY
  |  收藏  |  浏览/下载:18/0  |  提交时间:2018/08/28
Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文  OAI收割
SUPERLATTICES AND MICROSTRUCTURES, 2016, 卷号: 96
作者:  
Liu, W;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
收藏  |  浏览/下载:26/0  |  提交时间:2017/03/11
Comparative study of the differential resistance of GaAs- and GaN-based laser diodes 期刊论文  OAI收割
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 卷号: 34, 期号: 4
作者:  
Li, X;  Liu, ZS;  Zhao, DG;  Jiang, DS;  Chen, P
收藏  |  浏览/下载:53/0  |  提交时间:2017/03/11
Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文  OAI收割
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 681
作者:  
Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载:22/0  |  提交时间:2017/03/11
Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 卷号: 122, 期号: 9
作者:  
Liang, F;  Chen, P;  Zhao, DG;  Jiang, DS;  Zhao, ZJ
收藏  |  浏览/下载:37/0  |  提交时间:2017/03/11
Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes 期刊论文  OAI收割
OPTICS EXPRESS, 2016, 卷号: 24, 期号: 13
作者:  
Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
收藏  |  浏览/下载:21/0  |  提交时间:2017/03/11
Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC 期刊论文  OAI收割
CHINESE PHYSICS B, 2016, 卷号: 25, 期号: 5
作者:  
Liang, F;  Chen, P;  Zhao, DG;  Jiang, DS;  Zhao, ZJ
收藏  |  浏览/下载:17/0  |  提交时间:2017/03/11
XPS study of impurities in Si-doped AlN film 期刊论文  OAI收割
SURFACE AND INTERFACE ANALYSIS, 2016, 卷号: 48, 期号: 12
作者:  
Liang, F;  Chen, P;  Zhao, DG;  Jiang, DS;  Zhao, ZJ
收藏  |  浏览/下载:38/0  |  提交时间:2017/03/11