机构

• 苏州纳米技术与纳米... [10]

采集方式

• OAI收割 [10]

内容类型

• 期刊论文 [10]

发表日期

• 2018 [7]
• 2017 [2]
• 2016 [1]

学科主题

筛选

浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si 期刊论文  OAI收割 Journal of Nanophotonics, 2018 作者:  Liu, Legong;  Feng, Meixin(冯美鑫);  Liu, Jianxun;  Sun, Qian(孙钱);  Sun, Xiujian(孙秀建)   |  收藏  |  浏览/下载：62/0  |  提交时间：2019/03/27 High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2018 作者:  Zhu, Guangrun;  Gao, Hongwei(高宏伟);  Sun, Qian(孙钱);  Chen, Tangsheng;  Yang, Hui(杨辉)   |  收藏  |  浏览/下载：88/0  |  提交时间：2019/03/27 Room-temperature electrically pumped InGaN-based microdisk laser grown on Si 期刊论文  OAI收割 OPTICS EXPRESS, 2018 作者:  Zhou, Yu(周宇);  Liu, Jianping(刘建平);  Feng, Meixin(冯美鑫);  Zhang, Liqun(张立群);  Sun, Xiaojuan   |  收藏  |  浏览/下载：88/0  |  提交时间：2019/03/27 On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si 期刊论文  OAI收割 SCIENTIFIC REPORTS, 2018 作者:  He, Junlei(何俊蕾);  Feng, Meixin(冯美鑫);  Zhong, Yaozong;  Wang, Jin(王锦);  Zhou, Rui   |  收藏  |  浏览/下载：86/0  |  提交时间：2019/03/27 Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文  OAI收割 ACS PHOTONICS, 2018 作者:  Li, Dabing;  Yang, Hui(杨辉);  Zheng, Xinhe;  Ikeda, Masao;  Wang, Huaibing(王怀兵)   |  收藏  |  浏览/下载：87/0  |  提交时间：2019/03/27 On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si 期刊论文  OAI收割 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2018 作者:  Zhang, Yuantao;  Feng, Meixin(冯美鑫);  Wang, Jin(王锦);  Zhou, Rui;  Sun, Qian(孙钱)   |  收藏  |  浏览/下载：98/0  |  提交时间：2019/03/27 Unintentional incorporation of Ga in the nominal AlN spacer of AlInGaN/AlN/GaN Heterostructure 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018 作者:  Dai, Shujun(戴淑君);  Gao, Hongwei(高宏伟);  Zhou, Yu(周宇);  Zhong, Yaozong;  Wang, Jin   |  收藏  |  浏览/下载：62/0  |  提交时间：2019/03/27 p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process 期刊论文  OAI收割 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2017 作者:  Zhou, Yu（周宇）;  Zhong, Yaozong;  Gao, Hongwei（高宏伟）;  Dai, Shujun;  He, Junlei   |  收藏  |  浏览/下载：51/0  |  提交时间：2018/02/05 Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl-2/N-2/O-2 plasma with a low-energy ion bombardment 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2017 作者:  Zhong, Yaozong;  Yu Zhou;  Gao, Hongwei（高宏伟）;  Dai, Shujun（戴淑君）;  He, Junlei（何俊蕾）   |  收藏  |  浏览/下载：62/0  |  提交时间：2018/02/06 High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2016, 卷号: 37, 期号: 12 作者:  Huang, Sen;  Liu, Xinyu;  Wang, Xinhua;  Kang, Xuanwu;  Zhang, Jinhan 收藏  |  浏览/下载：79/0  |  提交时间：2017/03/11