中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [8]
武汉植物园 [1]
植物研究所 [1]
采集方式
OAI收割 [10]
内容类型
期刊论文 [10]
发表日期
2016 [2]
2013 [3]
2012 [4]
2011 [1]
学科主题
光电子学 [8]
Food Scien... [1]
筛选
浏览/检索结果:
共10条,第1-10条
帮助
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
Diversity of polyphenols in the peel of apple (Malus sp.) germplasm from different countries of origin
期刊论文
OAI收割
INTERNATIONAL JOURNAL OF FOOD SCIENCE AND TECHNOLOGY, 2016, 卷号: 51, 期号: 1, 页码: 222-230
作者:
Guo, Shaojian
;
Guan, Le
;
Cao, Yuegang
;
Li, Chunfeng
;
Chen, Jie
  |  
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2017/04/13
Anthocyanins
apple
dihydrochalcones
flavanols
ultra high-performance liquid chromatography
Diversity of polyphenols in the peel of apple (Malus sp.) germplasm from different countries of origin
期刊论文
OAI收割
INTERNATIONAL JOURNAL OF FOOD SCIENCE AND TECHNOLOGY, 2016, 卷号: 51, 期号: 1, 页码: 222-230
作者:
Guo, Shaojian
;
Guan, Le
;
Cao, Yuegang
;
Li, Chunfeng
;
Chen, Jie
  |  
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2022/07/08
Anthocyanins
apple
dihydrochalcones
flavanols
ultra high-performance liquid chromatography
Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
期刊论文
OAI收割
solid-state electronics, 2013, 卷号: 83, 页码: 66-70
Wang, Lanxiang
;
Su, Shaojian
;
Wang, Wei
;
Gong, Xiao
;
Yang, Yue
;
Guo, Pengfei
;
Zhang, Guangze
;
Xue, Chunlai
;
Cheng, Buwen
;
Han, Genquan
;
Yeo, Yee-Chia
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2013/08/27
Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation
期刊论文
OAI收割
ieee electron device letters, 2013, 卷号: 34, 期号: 3, 页码: 339-341
Gong, Xiao
;
Han, Genquan
;
Bai, Fan
;
Su, Shaojian
;
Guo, Pengfei
;
Yang, Yue
;
Cheng, Ran
;
Zhang, Dongliang
;
Zhang, Guangze
;
Xue, Chunlai
;
Cheng, Buwen
;
Pan, Jisheng
;
Zhang, Zheng
;
Tok, Eng Soon
;
Antoniadis, Dimitri
;
Yeo, Yee-Chia
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2013/09/17
Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
期刊论文
OAI收割
Solid-State Electronics, Solid-State Electronics, 2013, 2013, 卷号: 83, 83, 页码: 66–70, 66–70
作者:
Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo
  |  
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2014/04/04
Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer
期刊论文
OAI收割
digest of technical papers - symposium on vlsi technology, 2012, 页码: 97-98
Han, Genquan
;
Su, Shaojian
;
Wang, Lanxiang
;
Zhang, Zheng
;
Xue, Chunlai
;
Cheng, Buwen
;
Yeo, Yee-Chia
;
Wang, Wei
;
Gong, Xiao
;
Yang, Yue
;
Ivana
;
Guo, Pengfei
;
Guo, Cheng
;
Zhang, Guangze
;
Pan, Jisheng
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2013/05/07
Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
期刊论文
OAI收割
international symposium on vlsi technology, systems, and applications, proceedings, 2012, 页码: 6210151
Wang, Lanxiang
;
Han, Genquan
;
Su, Shaojian
;
Cheng, Buwen
;
Yeo, Yee-Chia
;
Zhou, Qian
;
Yang, Yue
;
Guo, Pengfei
;
Wang, Wei
;
Tong, Yi
;
Lim, Phyllis Shi Ya
;
Xue, Chunlai
;
Wang, Qiming
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2013/05/07
Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal
期刊论文
OAI收割
ieee electron device letters, 2012, 卷号: 33, 期号: 11, 页码: 1529-1531
Wang LX (Wang, Lanxiang)
;
Su SJ (Su, Shaojian)
;
Wang W (Wang, Wei)
;
Yang Y (Yang, Yue)
;
Tong Y (Tong, Yi)
;
Liu B (Liu, Bin)
;
Guo PF (Guo, Pengfei)
;
Gong X (Gong, Xiao)
;
Zhang GZ (Zhang, Guangze)
;
Xue CL (Xue, Chunlai)
;
Cheng BW (Cheng, Buwen)
;
Han GQ (Han, Genquan)
;
Yeo YC (Yeo, Yee-Chia)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2013/03/27
Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs
期刊论文
OAI收割
electrochemical and solid-state letters, 2012, 卷号: 15, 期号: 6, 页码: h179-h181
Wang, Lanxiang
;
Han, Genquan
;
Su, Shaojian
;
Zhou, Qian
;
Yang, Yue
;
Guo, Pengfei
;
Wang, Wei
;
Tong, Yi
;
Lim, Phyllis Shi Ya
;
Liu, Bin
;
Kong, Eugene Yu-Jing
;
Xue, Chunlai
;
Wang, Qiming
;
Cheng, Buwen
;
Yeo, Yee-Chia
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2013/05/07
High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules
期刊论文
OAI收割
technical digest- international electron devices meeting, iedm, 2011, 页码: 16.7.1-16.7.3
Han, Genquan
;
Su, Shaojian
;
Zhan, Chunlei
;
Zhou, Qian
;
Yang, Yue
;
Wang, Lanxiang
;
Guo, Pengfei
;
Wei, Wang
;
Wong, Choun Pei
;
Shen, Ze Xiang
;
Cheng, Buwen
;
Yeo, Yee-Chia
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2012/06/13
Electron devices
Germanium
Tin