机构

• 上海微系统与信息技... [30]
• 半导体研究所 [5]
• 上海技术物理研究所 [2]

采集方式

• OAI收割 [36]
• iSwitch采集 [1]

内容类型

• 期刊论文 [37]

发表日期

• 1999 [1]
• 1998 [2]
• 1997 [1]
• 1996 [5]
• 1995 [7]
• 1994 [4]
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学科主题

• Instrumen... [10]
• Physics, A... [4]
• Atomic [3]
• Engineerin... [3]
• Instrument... [3]
• Molecular ... [3]
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浏览/检索结果: 共37条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Kinetics of wet oxidation at 1000 degrees c of si0.5ge0.5 relaxed alloy 期刊论文  iSwitch采集 Semiconductor science and technology, 1999, 卷号: 14, 期号: 5, 页码: 484-487 作者:  Zhang, JP;  Hemment, PLF;  Parker, EHC 收藏  |  浏览/下载：32/0  |  提交时间：2019/05/12 Gettering of Cu by He-induced cavities in SIMOX materials 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 卷号: 134, 期号: 3-4, 页码: 360-364 Zhang, M; Wang, LW; Gao, JX; Lin, CL; Hemment, PLF; Gutjahr, K; Gosele, U 收藏  |  浏览/下载：21/0  |  提交时间：2012/03/25 SILICON-OXIDES  IMPLANTATION  COPPER  BREAKDOWN  NICKEL   Study of Cu gettering to cavities in separation by implantation of oxygen substrates 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 1998, 卷号: 72, 期号: 7, 页码: 830-832 Zhang, M; Lin, CL; Hemment, PLF; Gutjahr, K; Gosele, U 收藏  |  浏览/下载：19/0  |  提交时间：2012/03/25 SILICON-OXIDES  BREAKDOWN  COPPER  NICKEL   Gettering of Cu to voids induced by H+ implantation in SIMOX substrate 期刊论文  OAI收割 PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1997, 卷号: 97, 期号: 23, 页码: 86-91 Zhang,M; Lin,CL; Hemment,PLF; Gutjahr,K; Gosele,U 收藏  |  浏览/下载：13/0  |  提交时间：2012/03/25 Experimental studies of superhard materials carbon nitride CNx prepared by ion-beam synthesis method 期刊论文  OAI收割 SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 1996, 卷号: 39, 期号: 4, 页码: 404-411 作者:  Xin HP;  Lin CL;  Xu HP;  Zou SC;  Shi XH   |  收藏  |  浏览/下载：14/0  |  提交时间：2012/11/21 Transmission electron microscopy and spectroscopic ellipsometry studies of damage layer induced by large tilt angle ion implantation 期刊论文  OAI收割 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 卷号: 143, 期号: 8, 页码: 2636-2640 He,ZP; Cristiano,F; Zhou,ZY; Qian,YH; Chen,LY; Lin,CL; Hemment,PLF; Zou,SC 收藏  |  浏览/下载：10/0  |  提交时间：2012/03/25 P+-N   Experimental studies of superhard materials carbon nitride CNx prepared by ion-beam synthesis method 期刊论文  OAI收割 SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 1996, 卷号: 39, 期号: 4, 页码: 404-411 Xin,HP; Lin,CL; Xu,HP; Zou,SC; Shi,XH; Wu,XL; Zhu,H; Hemment,PLF 收藏  |  浏览/下载：14/0  |  提交时间：2012/03/25 STRUCTURAL-PROPERTIES  SILICON-NITRIDE  FILMS  IMPLANTATION  N+   Optical characterization of doped top layers in SOI structures formed by ion implantation 期刊论文  OAI收割 ION BEAM MODIFICATION OF MATERIALS, 1996, 期号: 0, 页码: 452-456 Yu,YH; Liu,XH; Zou,SC; Hemment,PLF 收藏  |  浏览/下载：13/0  |  提交时间：2012/03/25 Aggregation and precipitation in high dose as ion implanted Ge0.5Si0.5 alloy 期刊论文  OAI收割 nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1996, 卷号: 119, 期号: 4, 页码: 510-514 Fan TW; Zou LF; Wang ZG; Hemment PLF; Greaves SJ; Watts JF 收藏  |  浏览/下载：30/0  |  提交时间：2010/11/17 ELECTRICAL-PROPERTIES  SI0.5GE0.5 ALLOY  LAYERS  HETEROSTRUCTURES  SB  SUPERLATTICES  DIFFUSION  REGROWTH  SILICON  SI   FORMATION OF BURIED CARBON NITRIDE BY HIGH-DOSE NITROGEN IMPLANTATION INTO CARBON THIN-FILM 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 卷号: 103, 期号: 3, 页码: 309-312 作者:  XIN HP;  LIN CL;  ZHU SY;  ZOU SC   |  收藏  |  浏览/下载：10/0  |  提交时间：2012/11/21