机构

• 近代物理研究所 [6]
• 上海药物研究所 [2]
• 新疆理化技术研究所 [1]
• 高能物理研究所 [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [9]
• 会议论文 [2]

发表日期

• 2025 [2]
• 2021 [2]
• 2020 [1]
• 2018 [2]
• 2014 [1]
• 2013 [2]
• 更多

学科主题

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择发表日期升序发表日期降序题名升序题名降序提交时间升序提交时间降序作者升序作者降序 Discovery of 3,4-dihydroisoquinoline-2(1H)-carboxamide STING inhibitors as anti-inflammatory agents 期刊论文  OAI收割 EUROPEAN JOURNAL OF MEDICINAL CHEMISTRY, 2025, 卷号: 297, 页码: 20 作者:  Zhou, Xiaoqian;  Yue, Hangtian;  Wang, Xiyuan;  Zang, Shumin;  Li, Han   |  收藏  |  浏览/下载：2/0  |  提交时间：2025/09/09 Stimulator of interferon genes  Inhibitors  Acute kidney injury  3,4-Dihydroisoquinoline-2(1H)-Carboxamide   Discovery of a non-nucleotide stimulator of interferon genes (STING) agonist with systemic antitumor effect 期刊论文  OAI收割 MEDCOMM, 2025, 卷号: 6, 期号: 1, 页码: e70001 作者:  Wang, Xiyuan;  Zhan, Zhengsheng;  Wang, Zhen;  Zhang, Yan;  Zhao, Kaiyan   |  收藏  |  浏览/下载：33/0  |  提交时间：2025/06/04 antitumor  immune memory  innate immunity  STING agonist   Engineering and Microscopic Mechanism of Quantum Emitters Induced by Heavy Ions in hBN 期刊论文  OAI收割 ACS PHOTONICS, 2021, 卷号: 8, 期号: 10, 页码: 2912-2922 作者:  Gu, Rui;  Wang, Lei;  Zhu, Huiping;  Han, Shuangping;  Bai, Yurong   |  收藏  |  浏览/下载：85/0  |  提交时间：2021/12/13 heavy ion irradiation  hBN  quantum emitters  PL mapping  production efficiency  point defects   Radiation effects of heavy ions on the static and dynamic characteristics of 850 nm high-speed vertical cavity surface emitting lasers 期刊论文  OAI收割 JOURNAL OF LUMINESCENCE, 2021, 卷号: 237, 页码: 7 作者:  Shan, Xiaoting;  Li, Bo   |  收藏  |  浏览/下载：73/0  |  提交时间：2021/12/09 VCSEL  Radiation effects  Dynamic characteristics  Quantum wells   Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 7, 页码: 1345-1350 作者:  Lei Wang ;   Ningyang Liu;   Bo Li ;   Huiping Zhu;   Xiaoting Shan;   Qingxi Yuan;   Xuewen Zhang;   Zheng Gong;   Fazhan Zhao ;   Naixin Liu;   Mengxin Liu;   Binhong Li;   Jiantou Gao;   Yang Huang ;   Jianqun Yang;   Xingji Li;   Jiajun Luo;   Zhengsheng Han, and Xinyu   |  收藏  |  浏览/下载：65/0  |  提交时间：2021/06/28 Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510 作者:  Yang, L (Yang, Ling)[ 1,2 ];  Zhang, QZ (Zhang, Qingzhu)[ 1,3 ];  Huang, YB (Huang, Yunbo)[ 1,2 ];  Zheng, ZS (Zheng, Zhongshan)[ 1,2 ];  Li, B (Li, Bo)[ 1,2 ]   |  收藏  |  浏览/下载：56/0  |  提交时间：2018/09/18 Anneal  Finfet  On-state Bias  Total Ionizing Dose (Tid)   Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 11, 页码: 2784-2792 作者:  Liu, Ningyang;  Wang, Lei;  Song LG(宋力刚);  Cao XZ(曹兴忠);  Wang BY(王宝义)   |  收藏  |  浏览/下载：78/0  |  提交时间：2019/10/11 Atom displacement  carrier removal effect  carrier ultrafast dynamics  GaN  indium localization  light-emitting diodes (LEDs)  nonradiative recombination centers (NRCs)  positron annihilation spectroscopy (PAS)  silicon ion irradiation  strain relaxation   Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 卷号: 61, 页码: 1459-1467 作者:  Luo, Jie;  Yao, Huijun;  Sun, Youmei;  Xi, Kai;  Geng, Chao   |  收藏  |  浏览/下载：63/0  |  提交时间：2018/07/05 Bragg Peak  Ion Range  Silicon-on-insulator  Single Event Upset   Influence of Deposited Energy in Sensitive Volume on Temperature Dependence of SEU Sensitivity in SRAM Devices 会议论文  OAI收割 作者:  Liu, Tianqi;  Geng, Chao;  Zhang, Zhangang;  Zhao, Fazhan;  Hou, Mingdong   |  收藏  |  浏览/下载：82/0  |  提交时间：2018/08/20 Single event upset  temperature dependence  energy deposition  Monte Carlo simulation  SRAM  heavy ions  bulk and SOI technologies   Influence of Deposited Energy in Sensitive Volume on Temperature Dependence of SEU Sensitivity in SRAM Devices 会议论文  OAI收割 作者:  Liu, Jie;  Sun, Youmei   |  收藏  |  浏览/下载：60/0  |  提交时间：2018/08/20 Single event upset  temperature dependence  energy deposition  Monte Carlo simulation  SRAM  heavy ions  bulk and SOI technologies