中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共50条,第1-10条 帮助

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Rock magnetic record of late Neogene red clay sediments from the Chinese Loess Plateau and its implications for East Asian monsoon evolution 期刊论文  OAI收割
PALAEOGEOGRAPHY PALAEOCLIMATOLOGY PALAEOECOLOGY, 2018, 卷号: 510, 期号: 特刊:IS, 页码: 109-123
作者:  
Song, YG (Song, Yougui);  Fang, XM (Fang, Xiaomin);  Chen, XL (Chen, Xiuling);  Torii, M (Torii, Masayuki);  Ishikawa, N (Ishikawa, Naoto)
  |  收藏  |  浏览/下载:68/0  |  提交时间:2019/05/16
Rock magnetic record of late Neogene red clay sediments from the Chinese Loess Plateau and its implications for East Asian monsoon evolution 期刊论文  OAI收割
PALAEOGEOGRAPHY PALAEOCLIMATOLOGY PALAEOECOLOGY, 2018, 卷号: 510, 页码: 109-123
作者:  
Song, Yougui;  Fang, Xiaomin;  Chen, Xiuling;  Torii, Masayuki;  Ishikawa, Naoto
  |  收藏  |  浏览/下载:32/0  |  提交时间:2020/06/23
An inhibitor of viral RNA replication is encoded by a plant resistance gene 期刊论文  OAI收割
PNAS, 2007, 卷号: 104, 期号: 34, 页码: 13833–13838
作者:  
Kazuhiro Ishibashi;  Kiyoshi Masuda;  Satoshi Naito;  Tetsuo Meshi;  Masayuki Ishikawa
  |  收藏  |  浏览/下载:14/0  |  提交时间:2017/07/26
Semiconductor laser diode 专利  OAI收割
专利号: US20020039374A1, 申请日期: 2002-04-04, 公开日期: 2002-04-04
作者:  
ONOMURA, MASAAKI;  SUZUKI, MARIKO;  ISHIKAWA, MASAYUKI
  |  收藏  |  浏览/下载:24/0  |  提交时间:2020/01/18
GaN based optoelectronic device and method for manufacturing the same 专利  OAI收割
专利号: US6221684, 申请日期: 2001-04-24, 公开日期: 2001-04-24
作者:  
SUGAWARA, HIDETO;  ISHIKAWA, MASAYUKI
  |  收藏  |  浏览/下载:19/0  |  提交时间:2019/12/24
Semiconductor laser and method of fabricating same 专利  OAI收割
专利号: US6031858, 申请日期: 2000-02-29, 公开日期: 2000-02-29
作者:  
HATAKOSHI, GENICHI;  ONOMURA, MASAAKI;  RENNIE, JOHN;  ISHIKAWA, MASAYUKI;  NUNOUE, SHINYA
  |  收藏  |  浏览/下载:15/0  |  提交时间:2020/01/13
Gallium nitride-based compound semiconductor laser and method of manufacturing the same 专利  OAI收割
专利号: US5987048, 申请日期: 1999-11-16, 公开日期: 1999-11-16
作者:  
ISHIKAWA, MASAYUKI;  YAMAMOTO, MASAHIRO;  NUNOUE, SHINYA;  NISHIO, JOHJI;  HATAKOSHI, GENICHI
  |  收藏  |  浏览/下载:19/0  |  提交时间:2019/12/26
Nitride compound semiconductor light emitting element and its manufacturing method 专利  OAI收割
专利号: US5981977, 申请日期: 1999-11-09, 公开日期: 1999-11-09
作者:  
FURUKAWA, CHISATO;  SUGAWARA, HIDETO;  ISHIKAWA, MASAYUKI;  SUZUKI, NOBUHIRO
  |  收藏  |  浏览/下载:12/0  |  提交时间:2019/12/24
Gallium nitride-based compound semiconductor laser and method of manufacturing the same 专利  OAI收割
专利号: US5966396, 申请日期: 1999-10-12, 公开日期: 1999-10-12
作者:  
OKAZAKI, HARUHIKO;  FUJIMOTO, HIDETOSHI;  ISHIKAWA, MASAYUKI;  NUNOUE, SHINYA;  HATAKOSHI, GENICHI
  |  收藏  |  浏览/下载:22/0  |  提交时间:2020/01/18
Light-emitting semiconductor device 专利  OAI收割
专利号: US5696389, 申请日期: 1997-12-09, 公开日期: 1997-12-09
作者:  
ISHIKAWA, MASAYUKI;  SUGAWARA, HIDETO;  NISHIKAWA, YUKIE;  ONOMURA, MASAAKI;  SAITO, SHINJI
  |  收藏  |  浏览/下载:29/0  |  提交时间:2019/12/24