机构

• 半导体研究所 [6]
• 物理研究所 [5]
• 长春应用化学研究所 [4]
• 昆明动物研究所 [4]
• 力学研究所 [3]

采集方式

• OAI收割 [22]

内容类型

• 期刊论文 [22]

发表日期

• 2017 [1]
• 2013 [2]
• 2012 [7]
• 2011 [2]
• 2010 [1]
• 2009 [1]
• 更多

学科主题

• 半导体材料 [4]
• 力学 [2]
• Parasitolo... [1]
• 半导体器件 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共22条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Influences of the helical strake cross-section shape on vortex-induced vibrations suppression for a long flexible cylinder 期刊论文  OAI收割 CHINA OCEAN ENGINEERING, 2017, 卷号: 31, 期号: 4, 页码: 438-446 作者:  Xu WH(徐万海);  Luan YS;  Liu LQ;  Wu YX(吴应湘) 收藏  |  浏览/下载：45/0  |  提交时间：2017/11/29 Helical Strakes  Viv Suppression  Cross-section Shape  Flexible Cylinder   Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 AIP ADVANCES, 2013, 卷号: 3, 期号: 9 Yu, YX; Lin, ZJ; Luan, CB; Lv, YJ; Feng, ZH; Yang, M; Wang, YT; Chen, H 收藏  |  浏览/下载：15/0  |  提交时间：2014/01/16 Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor 期刊论文  OAI收割 CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 6 Yu, YX; Lin, ZJ; Luan, CB; Wang, YT; Chen, H; Wang, ZG 收藏  |  浏览/下载：39/0  |  提交时间：2014/01/16 AlGaN/AlN/GaN heterostructure field-effect transistors  quasi-two-dimensional model  the polarization Coulomb field scattering  the two-dimensional electron gas mobility   Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 11 Luan, CB; Lin, ZJ; Lv, YJ; Meng, LG; Yu, YX; Cao, ZF; Chen, H; Wang, ZG 收藏  |  浏览/下载：16/0  |  提交时间：2013/09/17 MOBILITY   Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 期刊论文  OAI收割 CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 1 Cao, ZF; Lin, ZJ; Lu, YJ; Luan, CB; Yu, YX; Chen, H; Wang, ZG 收藏  |  浏览/下载：30/0  |  提交时间：2013/09/17 BREAKDOWN VOLTAGE  GAN   A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文  OAI收割 chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 097104 Lu YJ (Lu Yuan-Jie); Lin ZJ (Lin Zhao-Jun); Yu YX (Yu Ying-Xia); Meng LG (Meng Ling-Guo); Cao ZF (Cao Zhi-Fang); Luan CB (Luan Chong-Biao); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：21/0  |  提交时间：2013/04/02 Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 nanoscale research letters, 2012, 卷号: 7, 页码: 434 Lv YJ (Lv, Yuanjie); Lin ZJ (Lin, Zhaojun); Meng LG (Meng, Lingguo); Luan CB (Luan, Chongbiao); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Feng ZH (Feng, Zhihong); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：26/0  |  提交时间：2013/04/02 Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 11, 页码: 113501 Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Lv YJ (Lv, Yuanjie); Meng LG (Meng, Lingguo); Yu YX (Yu, Yingxia); Cao ZF (Cao, Zhifang); Chen H (Chen, Hong); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/27 Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 期刊论文  OAI收割 chinese physics b, 2012, 卷号: 21, 期号: 1, 页码: 17103 Cao, ZF; Lin, ZJ; Lu, YJ; Luan, CB; Yu, YX; Chen, H; Wang, ZG 收藏  |  浏览/下载：11/0  |  提交时间：2013/03/20 Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 054513 Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Feng ZH (Feng, Zhihong); Meng LG (Meng, Lingguo); Lv YJ (Lv, Yuanjie); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：17/0  |  提交时间：2013/04/02