中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共11条,第1-10条 帮助

条数/页: 排序方式:
The Forward Physics Facility at the High-Luminosity LHC 期刊论文  OAI收割
JOURNAL OF PHYSICS G-NUCLEAR AND PARTICLE PHYSICS, 2023, 卷号: 50, 期号: 3, 页码: 30501
作者:  
Feng, Jonathan L.;  Kling, Felix;  Reno, Mary Hall;  Rojo, Juan;  Soldin, Dennis
  |  收藏  |  浏览/下载:29/0  |  提交时间:2023/12/07
Taming chlorophylls by early eukaryotes underpinned algal interactions and the diversification of the eukaryotes on the oxygenated Earth 期刊论文  OAI收割
ISME JOURNAL, 2019, 卷号: 13, 期号: 8, 页码: 1899-1910
作者:  
Kashiyama, Yuichiro;  Yokoyama, Akiko;  Shiratori, Takashi;  Hess, Sebastian;  Not, Fabrice
  |  收藏  |  浏览/下载:167/0  |  提交时间:2019/09/10
Taming chlorophylls by early eukaryotes underpinned algal interactions and the diversification of the eukaryotes on the oxygenated Earth 期刊论文  OAI收割
ISME JOURNAL, 2019, 卷号: 13, 期号: 8, 页码: 1899-1910
作者:  
Kashiyama, Yuichiro;  Yokoyama, Akiko;  Shiratori, Takashi
  |  收藏  |  浏览/下载:35/0  |  提交时间:2019/10/17
Light-induced structural changes and the site of O=O bond formation in PSII caught by XFEL 期刊论文  OAI收割
NATURE, 2017, 卷号: 543, 期号: 7643, 页码: 131+
作者:  
Suga, Michihiro;  Akita, Fusamichi;  Sugahara, Michihiro;  Kubo, Minoru;  Nakajima, Yoshiki
  |  收藏  |  浏览/下载:18/0  |  提交时间:2022/03/28
Nitride-base semiconductor laser device 专利  OAI收割
专利号: US7088755, 申请日期: 2006-08-08, 公开日期: 2006-08-08
作者:  
NOMURA, YASUHIKO;  INOUE, DAIJIRO;  HATA, MASAYUKI;  KANO, TAKASHI
  |  收藏  |  浏览/下载:6/0  |  提交时间:2019/12/26
Nitride-based semiconductor laser device 专利  OAI收割
专利号: US6954478, 申请日期: 2005-10-11, 公开日期: 2005-10-11
作者:  
NOMURA, YASUHIKO;  KANO, TAKASHI
  |  收藏  |  浏览/下载:16/0  |  提交时间:2019/12/26
Nitride based semiconductor light emitting device and nitride based semiconductor laser device 专利  OAI收割
专利号: US6914922, 申请日期: 2005-07-05, 公开日期: 2005-07-05
作者:  
HAYASHI, NOBUHIKO;  GOTO, TAKENORI;  KANO, TAKASHI;  NOMURA, YASUHIKO
  |  收藏  |  浏览/下载:19/0  |  提交时间:2019/12/26
Semiconductor laser 专利  OAI收割
专利号: JP1988169089A, 申请日期: 1988-07-13, 公开日期: 1988-07-13
作者:  
KATSUTA HIROHIKO;  WATANABE TSUTOMU;  NOMURA TAKASHI;  SUZAKI SHINZO;  OSANAI YUTAKA
  |  收藏  |  浏览/下载:17/0  |  提交时间:2020/01/13
Distributed reflection semiconductor laser 专利  OAI收割
专利号: JP1988169091A, 申请日期: 1988-07-13, 公开日期: 1988-07-13
作者:  
SUZAKI SHINZO;  KATSUTA HIROHIKO;  WATANABE TSUTOMU;  NOMURA TAKASHI;  OSANAI YUTAKA
  |  收藏  |  浏览/下载:35/0  |  提交时间:2020/01/18
Laser transmitter 专利  OAI收割
专利号: JP1987216391A, 申请日期: 1987-09-22, 公开日期: 1987-09-22
作者:  
SUZAKI SHINZO;  KATSUTA HIROHIKO;  NOMURA TAKASHI;  WATANABE TSUTOMU
  |  收藏  |  浏览/下载:20/0  |  提交时间:2019/12/31