机构

• 苏州纳米技术与纳米... [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [12]

发表日期

• 2016 [2]
• 2015 [3]
• 2014 [2]
• 2013 [2]
• 2011 [3]

学科主题

筛选

浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Study of optical properties of bulk GaN crystals grown by HVPE 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 674 作者:  Gu, H(顾泓);  Ren, GQ(任国强);  Zhou, TF(周桃飞);  Tian, FF(田飞飞);  Xu, Y(徐俞) 收藏  |   The electrical properties of bulk GaN crystals grown by HVPE 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2016, 卷号: 436 作者:  Gu, H(顾泓);  Ren, GQ(任国强);  Zhou, TF(周桃飞);  Tian, FF(田飞飞);  Xu, Y(徐俞) 收藏  |   Progress in bulk GaN growth 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 6, 页码: 16 作者:  Xu, K(徐科);  Wang, JF(王建峰);  Ren, GQ(任国强) 收藏  |   Effect of carbon types on the generation and morphology of GaN polycrystals grown using the Na flux method 期刊论文  OAI收割 CRYSTENGCOMM, 2015, 卷号: 17, 期号: 5, 页码: 7 作者:  Liu, ZL（刘宗亮）;  Ren, GQ（任国强）;  Shi, L（石林）;  Su, XJ（苏旭军）;  Wang, JF（王建峰） 收藏  |   Evolution of the surface morphology of AlN epitaxial film by HVPE 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 409, 期号: 0, 页码: 100-104 作者:  Gong, XJ(弓晓晶);  Xu, K(徐科);  Huang, J(黄俊);  Liu, T;  Ren, GQ(任国强) 收藏  |   Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 1 作者:  Xu, GZ (徐耿钊);  Fan, YM (樊英民);  Wang, JF (王建峰);  Yang, H (杨辉);  Ren, GQ (任国强) 收藏  |   Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 1 作者:  Ren, GQ (任国强);  Xu, GZ (徐耿钊);  Xu, K (徐科);  Zhong, HJ (钟海舰);  Shi, L (石林) 收藏  |   Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 372, 期号: 0, 页码: 43-48 作者:  Ren, GQ(任国强);  Xu, K(徐科);  Su, XJ(苏旭军);  Yang, H(杨辉);  Zhou, TF(周桃飞) 收藏  |   Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 卷号: 46, 期号: 20 作者:  Ren, GQ(任国强) 收藏  |   Dislocation cross-slip in GaN single crystals under nanoindentation 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 22 作者:   收藏  |