中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [13]
古脊椎动物与古人类研... [1]
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OAI收割 [8]
iSwitch采集 [6]
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期刊论文 [13]
会议论文 [1]
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2020 [1]
2003 [3]
2002 [4]
2001 [2]
2000 [2]
1999 [2]
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学科主题
半导体物理 [4]
半导体材料 [3]
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Distal spinal nerve development and divergence of avian groups
期刊论文
OAI收割
SCIENTIFIC REPORTS, 2020, 卷号: 10, 期号: 1, 页码: 16
作者:
Rashid, Dana J.
;
Bradley, Roger
;
Bailleul, Alida M.
;
Surya, Kevin
;
Woodward, Holly N.
  |  
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2020/09/15
Low-frequency noise properties of gan schottky barriers deposited on intermediate temperature buffer layers
期刊论文
iSwitch采集
Materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525
作者:
Leung, BH
;
Fong, WK
;
Surya, C
;
Lu, LW
;
Ge, WK
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/05/12
Gan
Low-frequency noise
Deep levels
Deep level transient fourier spectroscopy
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
会议论文
OAI收割
1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003
Leung BH
;
Fong WK
;
Surya C
;
Lu LW
;
Ge WK
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2010/10/29
GaN
low-frequency noise
deep levels
deep level transient Fourier spectroscopy
DEVICES
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
期刊论文
OAI收割
materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525
Leung, BH
;
Fong, WK
;
Surya, C
;
Lu, LW
;
Ge, WK
收藏
  |  
浏览/下载:353/96
  |  
提交时间:2010/03/09
GaN
Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers
期刊论文
iSwitch采集
Ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
作者:
Leung, BH
;
Chan, NH
;
Fong, WK
;
Zhu, CF
;
Ng, SW
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2019/05/12
Deep level transient fourier spectroscopy
(dltfs)
Gallium nitride (gan)
Intermediate-temperature buffer layer (itbf)
Low-frequency noise
Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers
期刊论文
OAI收割
ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
Leung BH
;
Chan NH
;
Fong WK
;
Zhu CF
;
Ng SW
;
Lui HF
;
Tong KY
;
Surya C
;
Lu LW
;
Ge WK
收藏
  |  
浏览/下载:138/0
  |  
提交时间:2010/08/12
deep level transient Fourier spectroscopy
(DLTFS)
gallium nitride (GaN)
intermediate-temperature buffer layer (ITBF)
low-frequency noise
RESONANT-TUNNELING DIODES
GENERATION-RECOMBINATION NOISE
RANDOM-TELEGRAPH NOISE
ULTRAVIOLET PHOTODETECTORS
DEVICES
Study of gan thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy
期刊论文
iSwitch采集
Journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 99-104
作者:
Lu, LW
;
Fong, WK
;
Zhu, CF
;
Leung, BH
;
Surya, C
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2019/05/12
Characterization
Molecular beam epitaxy
Semiconducting materials
Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 99-104
Lu LW
;
Fong WK
;
Zhu CF
;
Leung BH
;
Surya C
;
Wang J
;
Ge WK
收藏
  |  
浏览/下载:103/14
  |  
提交时间:2010/08/12
characterization
molecular beam epitaxy
semiconducting materials
STRAIN
Photoluminescence of rapid-thermal annealed mg-doped gan films
期刊论文
iSwitch采集
Solid-state electronics, 2001, 卷号: 45, 期号: 7, 页码: 1153-1157
作者:
Wang, LS
;
Fong, WK
;
Surya, C
;
Cheah, KW
;
Zheng, WH
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2019/05/12
P-type gan
Metalorganic chemical vapor deposition
Photoluminescence
X-ray diffraction
Rapid-thermal annealing
Photoluminescence of rapid-thermal annealed Mg-doped GaN films
期刊论文
OAI收割
solid-state electronics, 2001, 卷号: 45, 期号: 7, 页码: 1153-1157
Wang LS
;
Fong WK
;
Surya C
;
Cheah KW
;
Zheng WH
;
Wang ZG
收藏
  |  
浏览/下载:81/5
  |  
提交时间:2010/08/12
p-type GaN
metalorganic chemical vapor deposition
photoluminescence
X-ray diffraction
rapid-thermal annealing
P-TYPE GAN
RECOMBINATION
EMISSION
ENERGY
BANDS