中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共9条,第1-9条 帮助

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A pristine record of outer Solar System materials from asteroid Ryugu's returned sample 期刊论文  OAI收割
NATURE ASTRONOMY, 2022, 卷号: 6, 期号: 10, 页码: 1163–1171
作者:  
Ito, Motoo;  Tomioka, Naotaka;  Uesugi, Masayuki;  Yamaguchi, Akira;  Shirai, Naoki
  |  收藏  |  浏览/下载:9/0  |  提交时间:2023/09/18
Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the element 专利  OAI收割
专利号: EP3336981A1, 申请日期: 2018-06-20, 公开日期: 2018-06-20
作者:  
TAKEUCHI, TETSUYA;  AKASAKI, ISAMU;  AKAGI, TAKANOBU
  |  收藏  |  浏览/下载:13/0  |  提交时间:2019/12/30
Ultrathin fiber-taper coupling with nitrogen vacancy centers in nanodiamonds at cryogenic temperatures 期刊论文  OAI收割
Optics Letters, 2015, 卷号: 40, 期号: 24, 页码: 5702-5705
作者:  
Fujiwara, Masazumi;  Zhao, Hong-Quan;  Noda, Tetsuya;  Ikeda, Kazuhiro;  Sumiya, Hitoshi
  |  收藏  |  浏览/下载:20/0  |  提交时间:2018/03/16
Surface emitting laser with current constriction layer and multiple active regions 专利  OAI收割
专利号: US8416824, 申请日期: 2013-04-09, 公开日期: 2013-04-09
作者:  
TAKEUCHI, TETSUYA;  SEKIGUCHI, YOSHINOBU
  |  收藏  |  浏览/下载:9/0  |  提交时间:2019/12/26
Defensin-like polypeptide LUREs are pollen tube attractants secreted from synergid cells 期刊论文  OAI收割
nature, 2009, 卷号: 458, 期号: 0, 页码: 357-362
作者:  
Satohiro Okuda;  Hiroki Tsutsui;  Keiko Shiina;  Stefanie Sprunck;  Hidenori Takeuchi
  |  收藏  |  浏览/下载:46/0  |  提交时间:2017/07/26
Light emitting diodes with graded composition active regions 专利  OAI收割
专利号: US6955933, 申请日期: 2005-10-18, 公开日期: 2005-10-18
作者:  
BOUR, DAVID P.;  GARDNER, NATHAN F.;  GOETZ, WERNER K.;  STOCKMAN, STEPHEN A.;  TAKEUCHI, TETSUYA
  |  收藏  |  浏览/下载:15/0  |  提交时间:2019/12/24
System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom 专利  OAI收割
专利号: US6934312, 申请日期: 2005-08-23, 公开日期: 2005-08-23
作者:  
TAKEUCHI, TETSUYA;  TAN, MICHAEL;  CHANG, YING-IAN
  |  收藏  |  浏览/下载:11/0  |  提交时间:2019/12/24
Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same 专利  OAI收割
专利号: US6829273, 申请日期: 2004-12-07, 公开日期: 2004-12-07
作者:  
AMANO, HIROSHI;  AKASAKI, ISAMU;  KANEKO, YAWARA;  YAMADA, NORIHIDE;  TAKEUCHI, TETSUYA
  |  收藏  |  浏览/下载:17/0  |  提交时间:2019/12/24
Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region 专利  OAI收割
专利号: US20030211647A1, 公开日期: 2003-11-13
作者:  
BOUR, DAVID P.;  TAKEUCHI, TETSUYA;  TANDON, ASHISH;  CHANG, YING-LAN;  TAN, MICHAEL R.T.
  |  收藏  |  浏览/下载:12/0  |  提交时间:2019/12/26