中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共8条,第1-8条 帮助

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10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current 期刊论文  OAI收割
ELECTRONICS LETTERS, 2018
作者:  
Wang, Qilong;  Zhang, Bingliang;  Du, Zhongkai;  Zhao, Jie(赵杰);  Chen, Fu(陈扶)
  |  收藏  |  浏览/下载:87/0  |  提交时间:2019/03/27
Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs 期刊论文  OAI收割
AIP ADVANCES, 2018
作者:  
Fan, Yaming(范亚明);  Song, Liang(宋亮);  Cai, Yong(蔡勇);  Zhang, Baoshun(张宝顺);  Zhao, Jie
  |  收藏  |  浏览/下载:65/0  |  提交时间:2019/03/27
Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress 期刊论文  OAI收割
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018
作者:  
Zhang, Baoshun(张宝顺);  Fan, Yaming(范亚明);  Hao, Ronghui(郝荣晖);  Yu, Guohao(于国浩);  Zhao, Jie
  |  收藏  |  浏览/下载:45/0  |  提交时间:2019/03/27
Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT 期刊论文  OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018
作者:  
Deng, Xuguang(邓旭光);  Li, Xiang;  Xu, Ning;  Hao, Ronghui(郝荣晖);  Zhang, Xinping
  |  收藏  |  浏览/下载:48/0  |  提交时间:2019/03/27
Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction 期刊论文  OAI收割
NANOPHOTONICS, 2018
作者:  
Zhang, Baoshun(张宝顺);  Zhang, Xiaodong(张晓东);  Zhao, Yukun;  Fu, Kai(付凯);  Sun, Chi
  |  收藏  |  浏览/下载:49/0  |  提交时间:2019/03/27
AlGaN/GaN MIS-HEMTs of Very-Low Vth Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator 期刊论文  OAI收割
IEEE ELECTRON DEVICE LETTERS, 2017
作者:  
Zhang, Zhili(张志利);  Li, Weiyi;  Fu, Kai(付凯)
  |  收藏  |  浏览/下载:33/0  |  提交时间:2018/02/05
Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes 期刊论文  OAI收割
IEEE PHOTONICS TECHNOLOGY LETTERS, 2017
作者:  
Zhao, Linna;  Chen, Leilei;  Yu, Guohao(于国浩);  Yan, Dawei;  Yang, Guofeng
  |  收藏  |  浏览/下载:19/0  |  提交时间:2018/02/06
Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate 期刊论文  OAI收割
SOLID-STATE ELECTRONICS, 2017
作者:  
Zhang, Zhili(张志利);  Song, Liang;  Li, Weiyi;  Fu, Kai(付凯);  Yu, Guohao(于国浩)
  |  收藏  |  浏览/下载:43/0  |  提交时间:2018/02/05